Migration behaviour of Europium implanted into single crystalline 6H-SiC

被引：4

作者：

Mohlala, T. M. ^{[1
]}

Hlatshwayo, T. T. ^{[1
]}

Mlambo, M. ^{[1
]}

Njoroge, E. G. ^{[1
]}

Motloung, S. V. ^{[2
]}

Malherbe, J. B. ^{[1
]}

机构：

[1] Univ Pretoria, Dept Phys, Lynnwood Rd, ZA-0002 Pretoria, South Africa

[2] Sefako Makgatho Hlth Sci Univ, Dept Phys, POB 94, ZA-0204 Medunsa, South Africa

来源：

VACUUM | 2017年 / 141卷

基金：

新加坡国家研究基金会;

关键词：

RBS; RBS-C; SiC; Radiation damage; Diffusion; SILICON-CARBIDE; FISSION-PRODUCTS; RADIATION-DAMAGE; DEGREES-C; DIFFUSION; SILVER; CESIUM;

D O I：

10.1016/j.vacuum.2017.04.006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Migration behaviour of Europium (Eu) implanted into 6H-SiC was investigated using Rutherford back scattering spectroscopy (RBS), RBS in a channelling mode (RBS-C) and scanning electron microscopy (SEM). Eu ions of 360 keV were implanted into 6H-SiC at 600 degrees C to a fluence of 1 x 10(16) cm(-2). The implanted samples were sequentially annealed at temperatures ranging from 1000 to 1400 degrees C, in steps of 100 degrees C for 5 h. RBS-C showed that implantation of Eu into 6H-SiC at 600 degrees C retained crystallinity with some radiation damage. Annealing of radiation damage retained after implantation already took place after annealing at 1000 degrees C. This annealing of radiation damage progressed with increasing annealing temperature up to 1400 degrees C. A shift of Eu towards the surface took place after annealing at 1000 degrees C. This shift became more pronounced and was accompanied by loss of Eu from the surface at annealing temperatures >1000 degrees C. This shift was accompanied by broadening of Eu peak/Fickian diffusion after annealing at temperatures >1100 degrees C. The migration of Eu occurring concurrently with the annealing of radiation damage was explained by trapping and de-trapping of Eu by radiation damage. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：130 / 134

页数：5

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