Effect of B2O3 addition on the sintering temperature and microwave dielectric properties of Zn2SiO4 ceramics

被引：60

作者：

Kim, Jin-Seong ^{[1
]}

Song, Myung-Eun ^{[1
]}

Joung, Mi-Ri ^{[1
]}

Choi, Jae-Hong ^{[1
]}

Nahm, Sahn ^{[1
]}

Gu, Sin-Il ^{[1
,2
]}

Paik, Jong-Hoo ^{[2
]}

Choi, Byung-Hyun ^{[2
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

[2] Korea Inst Ceram Engn & Technol, Seoul 153801, South Korea

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2010年 / 30卷 / 02期

关键词：

Sintering; Microwave dielectric properties; Zn2SiO4; GLASSES;

D O I：

10.1016/j.jeurceramsoc.2009.04.028

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

B2O3 (25.0 mol%) was added to Zn2-xSiO4-x ceramics (0.0 <= x <= 0.5) to decrease the sintering temperature. Specimens with 0.0 <= x <= 0.3 sintered at 900 degrees C were well sintered with a high density due to the formation of a B2O3 or B2O3-SiO2 liquid phase. The Q x f value of the Zn2SiO4 ceramic was relatively low, 32,000 GHz, most likely due to the presence of a ZnO second phase. A maximum Q x f value of 70,000 GHz was obtained for the specimens with x = 0.2-0.3, and their epsilon(r) and tau(f) values were approximately 6.0 and -21.9 ppm/degrees C, respectively. Ag metal did not interact with the 25.0 mol% B2O3-added Zn1.8SiO3.8 ceramic, indicating that Zn2-xSiO4-x ceramics containing B2O3 are a good candidate materials for low temperature co-fired ceramic devices. (C) 2009 Elsevier Ltd. All fights reserved.

引用

页码：375 / 379

页数：5

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