Technology progress on quantum dot light-emitting diodes for next-generation displays

被引：49

作者：

Bang, Sang Yun ^{[1
]}

Suh, Yo-Han ^{[1
]}

Fan, Xiang-Bing ^{[1
]}

Shin, Dong-Wook ^{[1
]}

Lee, Sanghyo ^{[1
]}

Choi, Hyung Woo ^{[1
]}

Lee, Tae Hoon ^{[1
]}

Yang, Jiajie ^{[1
]}

Zhan, Shijie ^{[1
]}

Harden-Chaters, William ^{[1
]}

Samarakoon, Chatura ^{[1
]}

Occhipinti, Luigi G. ^{[1
]}

Han, Soo Deok ^{[1
]}

Jung, Sung-Min ^{[1
]}

Kim, Jong Min ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Elect Engn Div, 9 JJ Thomson Ave, Cambridge CB3 0FA, England

来源：

NANOSCALE HORIZONS | 2021年 / 6卷 / 02期

基金：

英国工程与自然科学研究理事会;

关键词：

Organic light emitting diodes (OLED) - Display devices - Semiconductor quantum dots - Chelation - Heavy metals;

D O I：

10.1039/d0nh00556h

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quantum dot light-emitting diodes (QD-LEDs) are widely recognised as great alternatives to organic light-emitting diodes (OLEDs) due to their enhanced performances. This focus article surveys the current progress on the state-of-the-art QD-LED technology including material synthesis, device optimization and innovative fabrication processes. A discussion on the material synthesis of core nanocrystals, shell layers and surface-binding ligands is presented for high photoluminescence quantum yield (PLQY) quantum dots (QDs) using heavy-metal free materials. The operational principles of several types of QD-LED device architectures are also covered, and the recent evolution of device engineering technologies is investigated. By exploring the fabrication process for pixel-patterning of QD-LEDs on an active-matrix backplane for full-colour display applications, we anticipate further improvement in device performance for the commercialisation of next-generation displays.

引用

页码：68 / 77

页数：10

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