Effect of Gd doping concentration and sintering temperature on structural, optical, dielectric and magnetic properties of hydrothermally synthesized ZnO nanostructure

被引:67
作者
Das, Santanu [1 ,2 ]
Das, Sukhen [2 ]
Roychowdhury, Anirban [4 ]
Das, Dipankar [3 ]
Sutradhar, Soumyaditya [1 ]
机构
[1] Amity Univ, Dept Phys, Kolkata 700156, India
[2] Jadavpur Univ, Dept Phys, Kolkata 700032, India
[3] UGC DAE Consortium Sci Res, III-LB-8, Kolkata 700098, India
[4] Krishnath Coll, Dept Phys, Berhampur 742101, W Bengal, India
关键词
Nanostructures; Hydrothermal method; Magnetic properties; Dielectric properties; THIN-FILMS; N-TYPE; NANOPARTICLES; DEFECTS; CO; FERROMAGNETISM; EMISSION; BEHAVIOR; PHYSICS;
D O I
10.1016/j.jallcom.2017.02.216
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Nanoparticles of Gd3+ ions doped ZnO were prepared by hydrothermal method. To obtain the desired nanocrystalline phase and also, to enhance the oxygen vacancy inside the host ZnO nanoparticles, the as prepared sample is sintered at 400 and 600 degrees C for 2 h in vacuum atmosphere. X-ray diffractograms (XRD) analysis reveals the absence of any impure phases in the Gd3+ ions doped ZnO nanostructure. The presence of intrinsic defects/oxygen vacancies were confirmed by the analysis of UV-Visible, PL and Raman spectra of the doped sample. The qualitative and quantitative analysis of intrinsic defects was successfully explained by three-state trapping model using positron annihilation study. Room temperature ferromagnetism was found in the sample of 5% Gd3+ ions doped ZnO, which has been successfully explained by the vacancy assisted bound magnetic polaron model. Frequencies as well as temperature dependent dielectric constant of the samples were investigated. The dielectric constants were recorded at 40 Hz and 100 kHz frequencies and the values are nearly similar to 2.76 X 10(6) and 12782 respectively, in the 5% Gd-3+ ions doped ZnO sample. (C) 2017 Elsevier B. V. All rights reserved.
引用
收藏
页码:231 / 246
页数:16
相关论文
共 71 条
[1]   Lattice site location and optical activity of Er implanted ZnO [J].
Alves, E ;
Rita, E ;
Wahl, U ;
Correia, JG ;
Monteiro, T ;
Soares, J ;
Boemare, C .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2003, 206 :1047-1051
[2]  
Aparna PU., 2016, J. Mater. Sci. Chem. Eng, V4, P79, DOI [10.4236/msce.2016.42009, DOI 10.4236/MSCE.2016.42009]
[3]   Ferromagnetism from localized deep impurities in magnetic semiconductors [J].
Barzykin, V .
PHYSICAL REVIEW B, 2005, 71 (15)
[4]  
BERCIU M, 2001, PHYS REV LETT, V87
[5]   Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy [J].
Brauer, G. ;
Anwand, W. ;
Grambole, D. ;
Grenzer, J. ;
Skorupa, W. ;
Cizek, J. ;
Kuriplach, J. ;
Prochazka, I. ;
Ling, C. C. ;
So, C. K. ;
Schulz, D. ;
Klimm, D. .
PHYSICAL REVIEW B, 2009, 79 (11)
[6]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[7]   Lanthanide impurities in wide bandgap semiconductors: A possible roadmap for spintronic devices [J].
Caroena, G. ;
Machado, W. V. M. ;
Justo, J. F. ;
Assali, L. V. C. .
APPLIED PHYSICS LETTERS, 2013, 102 (06)
[8]   Electrical conduction and dielectric studies of ZnO pellets [J].
Chaari, Mariem ;
Matoussi, Adel .
PHYSICA B-CONDENSED MATTER, 2012, 407 (17) :3441-3447
[9]   Defect-trapped electrons and ferromagnetic exchange in ZnO [J].
Chakrabarty, Aurab ;
Patterson, Charles H. .
PHYSICAL REVIEW B, 2011, 84 (05)
[10]   Dielectrical behavior of nanostructured α-Fe2O3 with different annealed temperatures [J].
Chen, B ;
Sha, J ;
Ye, XS ;
Jiao, ZK ;
Zhang, LD .
SCIENCE IN CHINA SERIES A-MATHEMATICS PHYSICS ASTRONOMY, 1999, 42 (05) :510-516