Thermoelectric Properties of Mg2(Ge,Sn): Model and Optimization of ZT

被引：50
作者：
Sun, Jifeng [1 ]
Singh, David J. [1 ]
机构：
[1] Univ Missouri, Dept Phys & Astron, Columbia, MO 65211 USA
来源：
PHYSICAL REVIEW APPLIED | 2016年 / 5卷 / 02期
关键词：
ELECTRONIC-STRUCTURE; FIGURE; MERIT; PERFORMANCE; PBSE; PBTE; BI;
D O I：
10.1103/PhysRevApplied.5.024006
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report an investigation of the thermoelectric properties of Mg2Ge1-xSnx solid solution with x = 0.5 using models based on first-principles calculations and experimental data. The model gives transport properties including the figure of merit ZT as functions of carrier concentration and temperature. The model for the n-type predicts high ZT at optimized doping, and suggests that the ZT value can exceed 2 at T = 1000 K.
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页数：8
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