Laser diode end-pumped V:YAG passively Q-switched UV lasers at 335 nm

被引:24
作者
Jia, F. Q. [1 ]
机构
[1] Xiamen Univ, Inst Optoelect, Dept Elect Engn, Coll Informat Sci & Technol, Xiamen 361005, Peoples R China
关键词
UV laser; V:YAG; Nd:GdVO4; passively Q-switched; forth harmonic generation; 335; nm; ALL-SOLID-STATE; YAG SATURABLE ABSORBER; ND-YVO4/LBO RED LASER; 1.34; MU-M; V-YAG; REPETITION-RATE; NDGDVO4; LASER; MICROCHIP LASER; ND-GDVO4; GENERATION;
D O I
10.1002/lapl.200910083
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
In this paper, we present the using of a c-cut N&GdVO4 as the laser media, V:YAG as a saturable absorber and LBO as nonlinear crystal to obtain the passively Q-switched intra-cavity frequency doubled red laser at 670 nm and forth harmonic generation at 335 nm UV laser. Using dual end pump configurations at total pump power of 30 W at 808 urn, the repetition ratios of 153 kHz. the pulse width of 22 us, average output power of 82 mW. peak power of 24.4 W and single pulse energy of 0.54 mu J pulsed 335 nm UV laser are obtained, the corresponding optical to optical conversion efficiency is about 0.273%. [GRAPHICS] The pulse shape of single pulse at 335 nm(C) 2009 by Astro Ltd. Published exclusively by WILEY-VCH Verlag GmbH & Co. KGaA
引用
收藏
页码:850 / 855
页数:6
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