Hot electron assisted vertical leakage/breakdown in AlGaN/GaN heterostructures on Si substrates

被引：4

作者：

Hu, Anqi ^{[1
]}

Yang, Xuelin ^{[1
]}

Cheng, Jianpeng ^{[1
]}

Guo, Lei ^{[1
]}

Zhang, Jie ^{[1
]}

Feng, Yuxia ^{[1
]}

Ji, Panfeng ^{[1
]}

Tang, Ning ^{[1
]}

Ge, Weikun ^{[1
]}

Wang, Xinqiang ^{[1
,2
]}

Shen, Bo ^{[1
,2
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2017年 / 107卷

基金：

中国国家自然科学基金;

关键词：

AIGaN/GaN heterostructures on Si; Hot electron; Vertical leakage; Breakdown; FIELD-EFFECT TRANSISTORS; MOBILITY TRANSISTORS; TEMPERATURE-DEPENDENCE; IMPACT IONIZATION; MECHANISMS; DEVICES;

D O I：

10.1016/j.spmi.2017.03.058

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We present a hot electron assisted vertical leakage/breakdown mechanism in AIGaN/GaN heterostructures on Si substrates by a combination of applying vertical and lateral bias conditions. Beyond a critical bias point, the vertical leakage current under the combined bias condition is larger than that under a pure vertical bias condition which results in a lower breakdown voltage. The critical bias has a positive temperature dependence. A model is proposed that highly energetic hot electrons can release trapped electrons from defects and even ionize them. The model is proved by investigating the detrapping and ionization mechanisms by changing hot electron energy. (C) 2017 Elsevier Ltd. All rights reserved.

引用

页码：240 / 245

页数：6

共 19 条

[1] High temperature characteristics of AlGaN/GaN modulation doped field-effect transistors [J].