Experimental Realization of Thermal Stability Enhancement of Nickel Germanide Alloy by Using TiN Metal Capping

被引：7

作者：

Chou, Chen-Han ^{[1
]}

Tsai, Yi-He ^{[2
]}

Hsu, Chung-Chun ^{[1
]}

Jau, Yu-Hau ^{[3
]}

Lin, Yu-Hsien ^{[4
]}

Yeh, Wen-Kuan ^{[5
]}

Chien, Chao-Hsin ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan

[3] Adv Semicond Engn Inc, Kaohsiung 81170, Taiwan

[4] Natl United Univ, Dept Elect Engn, Miaoli 36063, Taiwan

[5] Natl Nano Device Labs, Hsinchu 30078, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 05期

关键词：

Agglomeration; germanium; nickel germanide (NiGe); Schottky junction; thermal stability; TiN capping; SHALLOW JUNCTION; DIFFUSION; FILMS; ACTIVATION; PMOSFETS; SURFACE; GATE; NISI; SI;

D O I：

10.1109/TED.2017.2679215

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrated the enhancement of thermal stability of nickel germanide (NiGe) alloy up to 600 degrees C by using titanium nitride (TiN) metal capping. A high ION/IOFF ratio of 2.9 x 105 was achieved by capping TiN metal on Ni for NiGe alloy formation at 600 degrees C. Detailed analyses were performed for realizing the mechanism for TiN capping on NiGe/Ge, including vertical element diffusion profile observation through depth-profiling X-ray photoelectron spectroscopy (XPS), element diffusion distribution by energy-dispersive X-ray spectroscopy mapping, and direct junction leakage current path detection by conductive atomic force microscopy. The experimental results indicated that TiN capping can reduce the risk of agglomeration and form a graded NiGe/Ge Schottky junction that is beneficial for suppressing the degradation of junction leakage. Subsequently, we compared the electrical performance of TiN/NiGe/n-Ge at various N/Ti ratios of TiNs. Based on the depth-profiling XPS results and electrical performance, TiN with an N/Ti ratio of approximately 1: 1 can resist the Ni and Ge diffusion, which facilitates the suppression of the agglomeration process. However, the TiN capping layers with an N/Ti ratio of less than approximately 1:1 (Ti-rich) were not favorable for resisting Ni and Ge diffusion.

引用

页码：2314 / 2320

页数：7

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