Chemical vapor deposition of SnO2 thin films from bis(β-diketonato)tin complexes

A series of bis(beta-diketonato)tin compounds have been systematically synthesized and examined as precursors for chemical vapor deposition of SnO2 thin films. These complexes were characterized by elemental analyses and NMR, IR and mass spectroscopic methods. X-ray single-crystal determination of Sn(tfac)(2) reveals that the complex possesses a distorted trigonal bipyramidal structure. The SnO2 films can be deposited on the substrates such as silicon, titanium nitride, and glass by using Sn(hfac)(2), Sn(tfac)(2) and Sn(acac)(2) as CVD precursors at deposition temperatures of 300-600 degrees C with a carrier gas of O-2. The deposition rates range from 20 to 600 Angstrom/min. Deposited films have been characterized by XRD, SEM, AFM, AES and AAS analyses.