Structure and morphology of the indium hydroxy sulphide thin films

被引：44

作者：

Bayón, R ^{[1
]}

Herrero, J ^{[1
]}

机构：

[1] CIEMAT, Dept Energias Renovables, E-28040 Madrid, Spain

来源：

APPLIED SURFACE SCIENCE | 2000年 / 158卷 / 1-2期

关键词：

chemical-bath-deposition; thin film; indium sulphide; Cd-free buffer layer; structure; morphology;

D O I：

10.1016/S0169-4332(99)00576-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have investigated the structure and surface morphology of chemical-bath-deposited (CBD) indium hydroxy sulphide thin Film using InCl3, thioacetamide (Tn) and acetic acid (AcOH). We have found that films are polycrystalline and their structure depends on deposition conditions. When low TA and AcOH concentrations are used, In5S4 is obtained; nevertheless, as these concentrations are increased, films are composed by a mixture of the cubic alpha- and beta-In2S3 phases. The film composition obtained by energy-dispersive X-ray analysis (EDS) shows that samples are sulphur deficient (S/In ratios between 0.5 and 1.2). The surface morphology of the films suggests two different growth mechanisms. Which one takes place seems to be related to reactant concentrations, especially to AcOH concentration. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：49 / 57

页数：9

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