Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET

被引：15

作者：

Gooran-Shoorakchaly, Armin ^{[1
]}

Ahmadchally, Alireza Aghanejad ^{[1
]}

Soleimani-Amiri, Samaneh ^{[1
]}

Gholipour, Morteza ^{[1
]}

机构：

[1] Babol Noshirvani Univ Technol, Elect & Comp Engn Dept, Babol 4714871167, Iran

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2021年 / 68卷 / 04期

关键词：

Armchair silicene nanoribbon (ASiNR); electrostatic doping (ED); field-effect transistor (FET);

D O I：

10.1109/TED.2021.3058337

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article, the transfer and output characteristics of an electrostatically doped (ED) 4-armchair silicene nanoribbon (4-ASiNR) field-effect transistor (FET) with three gates are investigated. The numerical simulations are carried out based on the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green's function (NEGF) formalism, implemented in the NanoTCAD ViDES simulator. Results show that ED SiNR-FET has better characteristics than chemically doped (CD) SiNR-FET. Additionally, ED-device is inherently free of negative impacts of impurities on the transistor's performance. The ED SiNR-FET functionality is analyzed using different channel lengths, introducing the extended channel ED-device (ECED) with an improved I-ON/I-OFF ratio of 3.8x10(5) and a significant I-ON of 4.6mA/mu m. A 15 nm ECED SiNR-FET with an 8 nm channel is studied under different temperatures and supply voltages. Based on the results, low-power (LP) and high-performance (HP) applications are suggested for the ECED-device, with the minimum subthreshold swing of 64mV/dec and the maximum transconductance of 63 mu S, respectively.

引用

页码：1956 / 1961

页数：6

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