A 1.8-GHz CMOS Power Amplifier Using Stacked nMOS and pMOS Structures for High-Voltage Operation

被引：17
作者：
Son, Ki Yong [1 ]
Park, Changkun [2 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Sch Elect Engn & Comp Sci, Taejon 305701, South Korea
[2] Soongsil Univ, Sch Elect Engn, Seoul 156743, South Korea
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2009年 / 57卷 / 11期
关键词：
Cascode amplifiers; CMOS; differential; power amplifiers; transformers; DISTRIBUTED ACTIVE-TRANSFORMER; LINE TRANSFORMER; 0.18-MU-M CMOS; EFFICIENCY; ARCHITECTURE; COMBINER;
D O I：
10.1109/TMTT.2009.2031936
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A class-E power amplifier is proposed in this study. It uses both nMOS and pMOS as switching devices to reduce the voltage stress of each transistor. A voltage-combining scheme with nMOS and pMOS is proposed, and a transformer is designed using this scheme. The power amplifier is implemented in a 0.18-mu m RF CMOS process. Measurements show a maximum output power of 30.2 dBm with 36.8% power-added efficiency at a 3.3-V supply voltage. The power amplifier sustains a supply voltage of up to 3.9 V.
引用
收藏
页码：2652 / 2660
页数：9
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