Design of Ternary Neural Network With 3-D Vertical RRAM Array

被引:58
作者
Li, Zhiwei [1 ,2 ]
Chen, Pai-Yu [2 ]
Xu, Hui [1 ]
Yu, Shimeng [2 ]
机构
[1] Natl Univ Def Technol, Coll Elect Sci & Engn, Changsha 410073, Hunan, Peoples R China
[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
Monolithic 3-D integration; multilayer perceptron (MLP); neural network; neuromorphiccomputing; resistive memory; MODEL;
D O I
10.1109/TED.2017.2697361
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, 2-D cross-point array of resistive random access memory (RRAM) has been proposed for implementing the weighted sum and weight update operations to accelerate the neuro-inspired learning algorithms on chip. This paper aims to extend such 2-D cross-point array to 3-D vertical array for storing and computing the large-scale weight matrices in the neural network. Considering the fabrication and 3-D integration of analog synapses (i.e., multilevel RRAM devices) are premature at this stage, we propose using today's available digital or binary RRAM devices for implementing a ternary neural network, which aggressively reduces the weight precision to ternary levels (+1, 0,-1) for the weighted sum in both feedforward and backward inference, while the multiple 3-D layers could serve for accumulating the small errors in a higher precision format for weight update. Compared to the 2-D implementation, the proposed 3-D vertical implementation shows larger read/write margin for weighted sum/weight update, smaller latency, and energy consumption for weight update. This paper demonstrates the attractiveness for building a monolithic 3-D neuromorphic hardware platform.
引用
收藏
页码:2721 / 2727
页数:7
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