Origins of Minimized Lattice Thermal Conductivity and Enhanced Thermoelectric Performance in WS2/WSe2 Lateral Superlattice

被引:20
|
作者
Hu, Yonglan [1 ]
Yang, Tie [2 ]
Li, Dengfeng [1 ]
Ding, Guangqian [1 ]
Dun, Chaochao [5 ]
Wu, Dandan [3 ,4 ]
Wang, Xiaotian [2 ]
机构
[1] Chongqing Univ Posts & Telecommun, Sch Sci, Chongqing 400065, Peoples R China
[2] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China
[3] Anhui Univ, Inst Phys Sci, Hefei 230601, Anhui, Peoples R China
[4] Anhui Univ, Inst Informat Technol, Hefei 230601, Anhui, Peoples R China
[5] Univ Notre Dame, Dept Aerosp & Mech Engn, Notre Dame, IN 46556 USA
来源
ACS OMEGA | 2021年 / 6卷 / 11期
基金
中国国家自然科学基金;
关键词
QUANTUM-WELL STRUCTURES; LARGE-AREA SYNTHESIS; TRANSPORT; BULK; FIGURE; MOSSE; WS2;
D O I
10.1021/acsomega.1c00457
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report a configuration strategy for improving the thermoelectric (TE) performance of two-dimensional transition metal dichalcogenide WS2 based on the experimentally prepared WS2/WSe2 lateral superlattice (LS) crystal. On the basis of density function theory combined with a Boltzmann transport equation, we show that the TE figure of merit zT of monolayer WS2 is remarkably enhanced when forming into a WS2/WSe2 LS crystal. This is primarily ascribed to the almost halved lattice thermal conductivity due to the enhanced anharmonic processes. Electronic transport properties parallel (xx) and perpendicular (yy) to the superlattice period are highly symmetric for both p- and n-doped LS owing to the nearly isotropic lifetime of charger carriers. The spin-orbital effect causes a significant split of conduction band and leads to three-fold degenerate sub-bands and high density of states (DOS), which offers opportunity to obtain a high n-type Seebeck coefficient (S). Interestingly, the separated degenerate subbands and upper conduction band in monolayer WS2 form a remarkable stair-like DOS, yielding a higher S. The hole carriers with much higher mobility than electrons reveal the high p-type power factor, and the potential to be good p-type TE materials with optimal zT exceeds 1 at 400 K in WS2/WSe2 LS.
引用
收藏
页码:7879 / 7886
页数:8
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