共 45 条
Transition from nonvolatile bipolar memory switching to bidirectional threshold switching in layered MoO3 nanobelts
被引:24
作者:

Du, Huiying
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Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Chen, Jinghong
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Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Tu, Meilin
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Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Luo, Songwen
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Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Li, Shangdong
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Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Electmn Thin Films & Integrated Dev, Chengdu 610054, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Yuan, Shuoguo
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Hong Kong Polytech Univ, Dept Appl Phys, Hung Ham, Kowloon, Hong Kong, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Gong, Tianxun
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Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Electmn Thin Films & Integrated Dev, Chengdu 610054, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Huang, Wen
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Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Electmn Thin Films & Integrated Dev, Chengdu 610054, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Jie, Wenjing
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Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China

Hao, Jianhua
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机构:
Hong Kong Polytech Univ, Dept Appl Phys, Hung Ham, Kowloon, Hong Kong, Peoples R China Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China
机构:
[1] Sichuan Normal Univ, Coll Chem & Mat Sci, Chengdu 610066, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Elect Sci & Engn, State Key Lab Electmn Thin Films & Integrated Dev, Chengdu 610054, Sichuan, Peoples R China
[3] Hong Kong Polytech Univ, Dept Appl Phys, Hung Ham, Kowloon, Hong Kong, Peoples R China
基金:
中国国家自然科学基金;
关键词:
MOLYBDENUM;
MEMRISTOR;
MEMTRANSISTORS;
D O I:
10.1039/c9tc03842f
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Resistive switching (RS) can be divided into two categories, namely nonvolatile memory switching and volatile threshold switching, depending on the volatility. MoO3 is one type of versatile transition metal oxide with a high work function, large electron affinity and wide band gap for potential applications in electronics, optoelectronics, batteries and electrochromic devices. Herein, we report the transition from nonvolatile memory to volatile threshold switching in single MoO3 nanobelts simply by changing the electrodes from Au to Ag. The one-dimensional (1D) alpha-MoO3 nanobelts are synthesized by a hydrothermal method and annealed under different atmospheres to adjust the concentration of oxygen vacancies. The prepared single MoO3 nanobelt is used to serve as the RS layer to construct lateral two-terminal RS devices. By using Au as the electrodes, the MoO3 nanobelts exhibit typical nonvolatile bipolar memory RS behaviors. On the other hand, bidirectional threshold RS properties can be achieved by employing Ag as the electrodes due to the large contact resistance between Ag and MoO3. More importantly, the threshold RS performance is significantly enhanced by annealing the nanobelts in N-2. The ON/OFF current ratio is increased up to 3 x 10(5) while the threshold voltage is decreased down to 0.75 V. These results demonstrate the diverse RS behaviors in single 1D MoO3 nanobelts and potential applications in volatile and non-volatile switching devices. In addition, the finding provides guidelines for improvement and/or alternation of RS behaviors through defect engineering and/or device modification in the multifunctional emerging devices.
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收藏
页码:12160 / 12169
页数:10
相关论文
共 45 条
[1]
Tunable Plasmon Resonances in Two-Dimensional Molybdenum Oxide Nanoflakes
[J].
Alsaif, Manal M. Y. A.
;
Latham, Kay
;
Field, Matthew R.
;
Yao, David D.
;
Medehkar, Nikhil V.
;
Beane, Gary A.
;
Kaner, Richard B.
;
Russo, Salvy P.
;
Ou, Jian Zhen
;
Kalantar-zadeh, Kourosh
.
ADVANCED MATERIALS,
2014, 26 (23)
:3931-3937

Alsaif, Manal M. Y. A.
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Latham, Kay
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Appl Sci, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Field, Matthew R.
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, RMIT Microscopy & Microanal Facil, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Yao, David D.
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Medehkar, Nikhil V.
论文数: 0 引用数: 0
h-index: 0
机构:
Monash Univ, Dept Mat Engn, Clayton, Vic 3168, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Beane, Gary A.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Melbourne, Sch Chem, Parkville, Vic 3052, Australia
Univ Melbourne, Inst Bio21, Parkville, Vic 3052, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Kaner, Richard B.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Chem & Biochem, Los Angeles, CA 90024 USA RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Russo, Salvy P.
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Appl Sci, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Ou, Jian Zhen
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia

Kalantar-zadeh, Kourosh
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, Melbourne, Vic, Australia
[2]
Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide
[J].
Balendhran, Sivacarendran
;
Deng, Junkai
;
Ou, Jian Zhen
;
Walia, Sumeet
;
Scott, James
;
Tang, Jianshi
;
Wang, Kang L.
;
Field, Matthew R.
;
Russo, Salvy
;
Zhuiykov, Serge
;
Strano, Michael S.
;
Medhekar, Nikhil
;
Sriram, Sharath
;
Bhaskaran, Madhu
;
Kalantar-zadeh, Kourosh
.
ADVANCED MATERIALS,
2013, 25 (01)
:109-114

Balendhran, Sivacarendran
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Deng, Junkai
论文数: 0 引用数: 0
h-index: 0
机构:
Monash Univ, Dept Mat Engn, Clayton, Vic 3168, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Ou, Jian Zhen
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Walia, Sumeet
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Scott, James
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Tang, Jianshi
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90024 USA RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Wang, Kang L.
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Los Angeles, Dept Elect Engn, Device Res Lab, Los Angeles, CA 90024 USA RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Field, Matthew R.
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Appl Sci, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

论文数: 引用数:
h-index:
机构:

Zhuiykov, Serge
论文数: 0 引用数: 0
h-index: 0
机构:
CSIRO, Mat Sci & Engn Div, Highett, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Strano, Michael S.
论文数: 0 引用数: 0
h-index: 0
机构:
MIT, Dept Chem Engn, Cambridge, MA 02139 USA RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Medhekar, Nikhil
论文数: 0 引用数: 0
h-index: 0
机构:
Monash Univ, Dept Mat Engn, Clayton, Vic 3168, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

Sriram, Sharath
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia

论文数: 引用数:
h-index:
机构:

Kalantar-zadeh, Kourosh
论文数: 0 引用数: 0
h-index: 0
机构:
RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
RMIT Univ, Sch Elect & Comp Engn, Funct Mat & Microsyst Res Grp, Melbourne, Vic, Australia RMIT Univ, Sch Elect & Comp Engn, MicroNanoElect & Sensor Technol Res Grp, Melbourne, Vic, Australia
[3]
Generalized molybdenum oxide surface chemical state XPS determination via informed amorphous sample model
[J].
Baltrusaitis, Jonas
;
Mendoza-Sanchez, Beatriz
;
Fernandez, Vincent
;
Veenstra, Rick
;
Dukstiene, Nijole
;
Roberts, Adam
;
Fairley, Neal
.
APPLIED SURFACE SCIENCE,
2015, 326
:151-161

Baltrusaitis, Jonas
论文数: 0 引用数: 0
h-index: 0
机构:
Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA
Univ Twente, Fac Sci & Technol, MESA Inst Nanotechnol, PhotoCatalyt Synth Grp, NL-7500 AE Enschede, Netherlands Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA

Mendoza-Sanchez, Beatriz
论文数: 0 引用数: 0
h-index: 0
机构:
Trinity Coll Dublin, Sch Chem, CRANN, Dublin, Ireland Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA

Fernandez, Vincent
论文数: 0 引用数: 0
h-index: 0
机构:
Ins Mat Jean Rouxel, F-44322 Nantes 3, France Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA

论文数: 引用数:
h-index:
机构:

Dukstiene, Nijole
论文数: 0 引用数: 0
h-index: 0
机构:
Kaunas Univ Technol, Dept Phys & Inorgan Chem, LT-50254 Kaunas, Lithuania Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA

Roberts, Adam
论文数: 0 引用数: 0
h-index: 0
机构:
Kratos Analyt Ltd, Manchester M17 1GP, Lancs, England Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA

Fairley, Neal
论文数: 0 引用数: 0
h-index: 0
机构:
Casa Software Ltd, Teignmouth TQ14 8NE, Devon, England Lehigh Univ, Dept Chem Engn, Bethlehem, PA 18015 USA
[4]
A Versatile Light-Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3
[J].
Bera, Ashok
;
Peng, Haiyang
;
Lourembam, James
;
Shen, Youde
;
Sun, Xiao Wei
;
Wu, T.
.
ADVANCED FUNCTIONAL MATERIALS,
2013, 23 (39)
:4977-4984

Bera, Ashok
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Peng, Haiyang
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Lourembam, James
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Shen, Youde
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Sun, Xiao Wei
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
South Univ Sci & Technol, Shenzhen 518055, Guangdong, Peoples R China Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore

Wu, T.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
King Abdullah Univ Sci & Technol, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia Nanyang Technol Univ, Sch Phys & Math Sci, Div Phys & Appl Phys, Singapore 637371, Singapore
[5]
Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires
[J].
Cagli, Carlo
;
Nardi, Federico
;
Harteneck, Bruce
;
Tan, Zhongkui
;
Zhang, Yuegang
;
Ielmini, Daniele
.
SMALL,
2011, 7 (20)
:2899-2905

Cagli, Carlo
论文数: 0 引用数: 0
h-index: 0
机构:
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

Nardi, Federico
论文数: 0 引用数: 0
h-index: 0
机构:
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

Harteneck, Bruce
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

Tan, Zhongkui
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

Zhang, Yuegang
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

Ielmini, Daniele
论文数: 0 引用数: 0
h-index: 0
机构:
Politecn Milan, Dipartimento Elettron & Informaz, I-20133 Milan, Italy Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA
[6]
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2
[J].
Cai, Lili
;
McClellan, Connor J.
;
Koh, Ai Leen
;
Li, Hong
;
Yalon, Eilam
;
Pop, Eric
;
Zheng, Xiaolin
.
NANO LETTERS,
2017, 17 (06)
:3854-3861

Cai, Lili
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

McClellan, Connor J.
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

Koh, Ai Leen
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Stanford Nano Shared Facil, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

Li, Hong
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

Yalon, Eilam
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

Pop, Eric
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA

Zheng, Xiaolin
论文数: 0 引用数: 0
h-index: 0
机构:
Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA Stanford Univ, Dept Mech Engn, Stanford, CA 94305 USA
[7]
Electric-Field-Induced Resistive Switching in a Family of Mott Insulators: Towards a New Class of RRAM Memories
[J].
Cario, Laurent
;
Vaju, Cristian
;
Corraze, Benoit
;
Guiot, Vincent
;
Janod, Etienne
.
ADVANCED MATERIALS,
2010, 22 (45)
:5193-+

Cario, Laurent
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

Vaju, Cristian
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

Corraze, Benoit
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

Guiot, Vincent
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France

Janod, Etienne
论文数: 0 引用数: 0
h-index: 0
机构:
Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France Univ Nantes, CNRS, Inst Mat Jean Rouxel IMN, F-44322 Nantes 3, France
[8]
Molybdenum trioxide nanostructures prepared by thermal oxidization of molybdenum
[J].
Ding, Q. P.
;
Huang, H. B.
;
Duan, J. H.
;
Gong, J. F.
;
Yang, S. G.
;
Zhao, X. N.
;
Du, Y. W.
.
JOURNAL OF CRYSTAL GROWTH,
2006, 294 (02)
:304-308

Ding, Q. P.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Huang, H. B.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Duan, J. H.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Gong, J. F.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Yang, S. G.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Zhao, X. N.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China

Du, Y. W.
论文数: 0 引用数: 0
h-index: 0
机构:
Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China Nanjing Univ, Natl Lab Microstruct, Nanjing 210093, Peoples R China
[9]
Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions
[J].
Guan, Xinwei
;
Hu, Weijin
;
Haque, Md Azimul
;
Wei, Nini
;
Liu, Zhixiong
;
Chen, Aitian
;
Wu, Tom
.
ADVANCED FUNCTIONAL MATERIALS,
2018, 28 (03)

Guan, Xinwei
论文数: 0 引用数: 0
h-index: 0
机构:
KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia KAUST, Phys Sci & Engn Div, Thuwal 239556900, Saudi Arabia

Hu, Weijin
论文数: 0 引用数: 0
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Haque, Md Azimul
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Wei, Nini
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Chen, Aitian
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Wu, Tom
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[10]
Origin of the high work function and high conductivity of MoO3
[J].
Guo, Yuzheng
;
Robertson, John
.
APPLIED PHYSICS LETTERS,
2014, 105 (22)

Guo, Yuzheng
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Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

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