Augmented behavioral characterization for modeling the nonlinear response of power amplifiers

被引：23

作者：

Asbeck, PM ^{[1
]}

Kobayashi, H ^{[1
]}

Iwamoto, M ^{[1
]}

Hanington, G ^{[1
]}

Nam, S ^{[1
]}

Larson, LE ^{[1
]}

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

来源：

2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3 | 2002年

关键词：

D O I：

10.1109/MWSYM.2002.1011577

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown a simple extension of the conventional behavioral characterization of amplifier nonlinearity can be used to quantify power amplifier performance including many memory effects. External variables that influence the amplifier behavior (such as power supply voltage, input bias or temperature) are Identified. Measurements of gain and phase (AM-AM and AM-PM conversion) are subsequently made over a range of these external variables. The variation of the external variables is explicitly taken into account with linear equivalent circuits at baseband. The method is shown to be useful for the estimation of bias circuit effects and self-heating effects.

引用

页码：135 / 138

页数：4

共 9 条

[1]

[Anonymous], IEEE T MICR THEOR TE

[2]

DAVID S, 2001 IEEE MTT S IMS, V1, P431

[3]

Kenington P.B., 2000, ARTECH MICR, P21

[4]

KENNEY S, 2000 IMS NONL CAD WO

[5]

LAUNAY F, 2001 EUR MICR C

[6]

Le Gallou N, 2001, IEEE MTT-S, P983, DOI 10.1109/MWSYM.2001.967057

[7]

Ranjan M, 2000, IEEE MTT S INT MICR, P493, DOI 10.1109/MWSYM.2000.861088

[8]

RIZZOLI D, 2001 EUR MICR C

[9] Measurement technique for characterizing memory effects in RF power amplifiers [J].

Vuolevi, JHK ;

Rahkonen, T ;

Manninen, JPA .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2001, 49 (08) :1383-1389

← 1 →