Sputtered Al-N codoped p-type transparent ZnO thin films suitable for optoelectronic devices

被引：25

作者：

Pathak, Trilok Kumar ^{[1
]}

Kumar, Vinod ^{[1
,2
]}

Purohit, L. P. ^{[1
]}

机构：

[1] Guru kula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India

[2] Univ Free State, Dept Phys, Bloemfontein, South Africa

来源：

OPTIK | 2016年 / 127卷 / 02期

关键词：

ZnO; p-Type conduction; RF sputtering; Aluminum-nitride codoped; NITROGEN;

D O I：

10.1016/j.ijleo.2015.10.013

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Aluminum-nitrogen (Al-N) codoped zinc oxide (ZnO) thin films were grown on glass substrate by radio frequency (RF) reactive magnetron sputtering using aluminum doped zinc oxide (AZO, 2.5 wt% Al2O3) target and N-2 as reactive gas. The structural, morphology, optical and electrical properties were also investigated with different flow rate of N-2 gas. X-ray diffraction results shows that codoped ZnO thin films have similar wurtzite structure like undoped ZnO film. Al-N thin films have high transparency 78% in visible region as the nitrogen flow rate increases the transparency and band gap decreases. The best p-type codoped sample shows a resistivity and hole concentration of 0.554 Omega cm and 8.3 x 10(19) cm(-3) at room temperature, respectively. Current-voltage (I-V) characteristics of p-type codoped ZnO thin films are also discussed. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：603 / 607

页数：5

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