ZnO as Transparent Conducting Oxide by Atomic Layer Deposition

被引：0

作者：

Sinha, Soumyadeep ^{[1
]}

Sarkar, Shaibal K. ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Energy Sci & Engn, Bombay 400076, Maharashtra, India

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

Atomic Layer Deposition (ALD); In-situ growth; Transparent conducting oxide (TCO); Zinc Oxide; THIN-FILMS; GROWTH;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Zinc Oxide (ZnO) films were deposited on SiO2/Si and glass substrates by Atomic Layer Deposition using Diethylzinc (DEZ) as the metal precursor and Water (H2O) as the oxidant over a temperature range of 75 degrees C to 225 degrees C. Here we demonstrated self limiting behavior of the Atomic Layer Deposition and the linear growth of the deposited films by in-situ quartz crystal microbalance (QCM) study. The maximum growth rate was found to be similar to 1.8 to 2 angstrom per ALD cycle. The as deposited crystalline ZnO films were found to be c-axis preferentially oriented with dense microstructures, homogeneous grain sizes and low surface roughness. We developed ZnO as similar to 80% transparent conductor with carrier density ca. 10(21) cm(-3) and a controllable resistivity from the intrinsic level (highly insulating) to 10(-3) Omega-cm without any intentional doping.

引用

页码：1183 / 1186

页数：4

共 50 条

[1] Atomic layer deposition of ZnO transparent conducting oxides
Yamada, A
Sang, BS
Konagai, M
APPLIED SURFACE SCIENCE, 1997, 112 : 216 - 222
[2] Growth of transparent conductive oxide ZnO films by atomic layer deposition
Sang, BS
Konagai, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1996, 35 (5B): : L602 - L605
[3] Atomic layer deposition of Ga-doped ZnO transparent conducting oxide substrates for CdTe-based photovoltaics
Chalker, Paul R.
Marshall, Paul A.
Romani, Simon
Roberts, Joseph W.
Irvine, Stuart J. C.
Lamb, Daniel A.
Clayton, Andrew J.
Williams, Paul A.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (01):
[4] Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films
Chalker, Paul R.
Marshall, Paul A.
Romani, Simon
Rosseinsky, Matthew J.
Rushworth, Simon
Williams, Paul A.
Buckett, John
McSporran, Neil
Ridealgh, John
TRANSPARENT CONDUCTING OXIDES AND APPLICATIONS, 2011, 1315 : 39 - 44
[5] ZnO layers grown by Atomic Layer Deposition: A new material for transparent conductive oxide
Godlewski, M.
Guziewicz, E.
Luka, G.
Krajewski, T.
Lukasiewicz, M.
Wachnicki, L.
Wachnicka, A.
Kopalko, K.
Sarem, A.
Dalati, B.
THIN SOLID FILMS, 2009, 518 (04) : 1145 - 1148
[6] Doping Mechanism in Transparent, Conducting Tantalum Doped ZnO Films Deposited Using Atomic Layer Deposition
Gao, Zhengning
Myung, Yoon
Huang, Xing
Kanjolia, Ravi
Park, Jeunghee
Mishra, Rohan
Banerjee, Parag
ADVANCED MATERIALS INTERFACES, 2016, 3 (21):
[7] Photo atomic layer deposition of transparent conductive ZnO films
Saito, K
Watanabe, Y
Takahashi, K
Matsuzawa, T
Sang, BS
Konagai, M
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 49 (1-4) : 187 - 193
[8] Enhanced Electrochemical Stability of TiO2-Protected, Al-doped ZnO Transparent Conducting Oxide Synthesized by Atomic Layer Deposition
Reed, P. Justin
Mehrabi, Hamed
Schichtl, Zebulon G.
Coridan, Robert H.
ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (50) : 43691 - 43698
[9] Transparent ZnO-TFT Arrays fabricated by atomic layer deposition
Park, Sang-Hee Ko
Hwang, Chi-Sun
Jeong, Hu Young
Chu, Hye Yong
Cho, Kyoung Ik
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (01) : H10 - H14
[10] Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates
Ott, AW
Chang, RPH
MATERIALS CHEMISTRY AND PHYSICS, 1999, 58 (02) : 132 - 138

← 1 2 3 4 5 →