Real-time assessment of overlayer removal on GaN, AlN, and AlGaN surfaces using spectroscopic ellipsometry

被引：58

作者：

Edwards, NV ^{[1
]}

Bremser, MD ^{[1
]}

Weeks, TW ^{[1
]}

Kern, RS ^{[1
]}

Davis, RF ^{[1
]}

Aspnes, DE ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,DEPT PHYS,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 14期

关键词：

D O I：

10.1063/1.116881

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Spectroscopic ellipsometry was used to assess the preparation of smooth and abrupt GaN, AlN, and AlGaN surfaces by wet chemical treatments in real time. About 20-50 Angstrom of overlayer typically can be removed from air-exposed samples. (C) 1996 American Institute of Physics.

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页码：2065 / 2067

页数：3

相关论文

共 14 条

[1]

Aspnes D. E., 1976, OPTICAL PROPERTIES S, P799

[2] DIELECTRIC FUNCTION AND SURFACE MICROROUGHNESS MEASUREMENTS OF INSB BY SPECTROSCOPIC ELLIPSOMETRY [J].

ASPNES, DE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1057-1060

[3] HIGH PRECISION SCANNING ELLIPSOMETER [J].

ASPNES, DE ;

STUDNA, AA .

APPLIED OPTICS, 1975, 14 (01) :220-228

[4] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

STUDNA, AA .

PHYSICAL REVIEW B, 1983, 27 (02) :985-1009

[5] OPTICAL-PROPERTIES OF ANODICALLY GROWN NATIVE OXIDES ON SOME GA-V COMPOUNDS FROM 1.5 TO 6.0 EV [J].

ASPNES, DE ;

SCHWARTZ, B ;

STUDNA, AA ;

DERICK, L ;

KOSZI, LA .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3510-3513

[6] METHODS FOR DRIFT STABILIZATION AND PHOTOMULTIPLIER LINEARIZATION FOR PHOTOMETRIC ELLIPSOMETERS AND POLARIMETERS [J].

ASPNES, DE ;

STUDNA, AA .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1978, 49 (03) :291-297

[7] Growth and doping of AlxGa1-xN deposited directly on alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy [J].

Bremser, MD ;

Perry, WG ;

Edwards, NV ;

Zheleva, T ;

Parikh, N ;

Aspnes, DE ;

Davis, RF .

GALLIUM NITRIDE AND RELATED MATERIALS, 1996, 395 :195-200

[8] ALGAN PN JUNCTIONS [J].

DMITRIEV, VA ;

IRVINE, K ;

CARTER, CH ;

ZUBRILOV, AS ;

TSVETKOV, DV .

APPLIED PHYSICS LETTERS, 1995, 67 (01) :115-117

[9] 1.0-GHZ THIN-FILM BULK ACOUSTIC-WAVE RESONATORS ON GAAS [J].

KLINE, GR ;

LAKIN, KM .

APPLIED PHYSICS LETTERS, 1983, 43 (08) :750-751

[10]

NAKAMURA S, 1995, JPN J APPL PHYS, V34, pL77