Mechanism of High Temperature Retention Property (up to 200 °C) in ZrO2-Based Memory Device With Inserting a ZnO Thin Layer

被引：32

作者：

Chand, Umesh ^{[1
]}

Huang, Chun-Yang ^{[1
]}

Tseng, Tseung-Yuen ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 10期

关键词：

RRAM; ZnO; ZrO2; resistive switching; double layer; Gibbs free energy; RESISTIVE SWITCHING PROPERTIES; IMPROVEMENT;

D O I：

10.1109/LED.2014.2345782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the switching mechanism of the ZrO2-based RRAM devices with the uniform and reliable reliability properties is investigated. The stability of memory window can be improved by inserting a ZnO thin film with the nonstoichiometric property between Ti top electrode and ZrO2 layer. Compared with ZrO2 film, the ZnO one can easily perform the oxidation-reduction reaction for stable endurance properties. In addition, through Gibbs free energy comparison of TiOx, ZrO2, and ZnO, we can demonstrate that the Gibbs free energy contributes to the retention performance. The device with thin ZnO layer has stable retention performance at high temperature (200 degrees C) due to its higher Gibbs free energy value than TiOx.

引用

页码：1019 / 1021

页数：3

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