Demonstration of a nanolithographic technique using a self-assembled monolayer resist for neutral atomic cesium

被引:0
|
作者
Berggren, KK
Younkin, R
Cheung, E
Prentiss, M
Black, AJ
Whitesides, GM
Ralph, DC
Black, CT
Tinkham, M
机构
[1] HARVARD UNIV,DEPT PHYS,CAMBRIDGE,MA 02138
[2] HARVARD UNIV,DEPT CHEM,CAMBRIDGE,MA 02138
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中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A new lithographic method of making nanostructures is demonstrated in which a patterned beam of neutral cesium atoms is used to damage a similar to 1.2-nm-thick self-assembled monolayer resist of alkanethiolates on gold. The attractive features of cesium for atomic lithography and the current techniques for neutral atom lithography are sketched. The method is detailed and investigations of the damage to the surface an described. This can be viewed as a first step towards fabricating nanostructures in silicon using optically patterned neutral atomic beams.
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页码:52 / &
页数:5
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