Simulation of Negative Differential Resistivity in Thin Ferroelectric Films

被引：10

作者：

Podgorny, Yu. ^{[1
]}

Sigov, A. ^{[1
]}

Vishnevskiy, A. ^{[1
]}

Vorotilov, K. ^{[1
]}

机构：

[1] Moscow State Tech Univ Radioengn Elect & Automat, Moscow 119454, Russia

来源：

FERROELECTRICS | 2014年 / 465卷 / 01期

关键词：

Leakage; negative differential resistivity; ferroelectric thin film; PZT; sol-gel; LEAKAGE CURRENTS;

D O I：

10.1080/00150193.2014.893738

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

I-V dependences of sol-gel PZT thin films containing areas with negative differential resistivity are studied. For their simulation a modified model taking into account simultaneous existence of different leakage components (the Dawber-Scott diffusion current, the ohmic one, and space charge limited one) is proposed. The proposed model extends the simulation range to the high-voltage values, and increases the accuracy determination of the oxygen vacancies concentration, as well as depletion width regardless of the test voltage rate in comparison with the Dawber-Scott model.

引用

页码：28 / 35

页数：8

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