Eu concentration dependence of Eu doped GaN nanocolumns grown by RF-plasma-assisted molecular beam epitaxy

被引：0

作者：

Imanishi, Tomohiko ^{[1
]}

Sekiguchi, Hiroto ^{[1
]}

Nishikawa, Satoshi ^{[1
]}

Ozaki, Kohei ^{[1
]}

Yamane, Keisuke ^{[1
]}

Okada, Hiroshi ^{[2
]}

Kishino, Katsumi ^{[3
]}

Wakahara, Akihiro ^{[1
]}

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Informat Engn, Toyohashi, Aichi, Japan

[2] Toyohashi Univ Technol, Elect Inspired Interdisciplinary Res Inst, Toyohashi, Aichi, Japan

[3] Sophia Univ, Dept Engn & Appl Sci, Tokyo, Japan

来源：

2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页数：1