A 230 GHz Quadrupler with 2 dBm Output Power in 90 nm SiGe BiCMOS Technology

被引：0
|
作者：
Ben Yishay, Roee [1 ]
Elad, Danny [1 ]
机构：
[1] IBM Haifa Res Lab, IL-31905 Haifa, Israel
来源：
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词：
H-Band; D-Band: SiGe BiCMOS; Power Amplifier; Frequency Doubler;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 230 GHz x4 frequency multiplier chain implemented in an advanced 90 nm SiGe BiCMOS technology (f(T)/f(MAX) = 300/350 GHz) is presented. The chain achieves a peak output power of 2 dBm and consists of D-Band balanced doubler, D-Band single-ended three stages common-emitter power amplifier which drives a Schottky-diode based H-Band doubler. It operates from 214 GHz to 245 GHz (3 dB power bandwidth) with 5 dBm input power at V-Band and consumes a total DC power of 200 mW. The D-Band PA is operated with 1.6 V supply and achieves output saturated power of 14 dBm, at 115 GHz and 14 dB small signal gain.
引用
收藏
页码：105 / 108
页数：4
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