Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

被引：0

作者：

Lohokare, SK ^{[1
]}

Schuetz, CA ^{[1
]}

Lu, Z ^{[1
]}

Prather, DW ^{[1
]}

Sulima, OV ^{[1
]}

Cox, JA ^{[1
]}

Solov'ev, VA ^{[1
]}

Ivanov, SV ^{[1
]}

Li, JV ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

来源：

SEMICONDUCTOR PHOTODETECTORS | 2004年 / 5353卷

关键词：

high-speed optical interconnections; inductively coupled plasma (ICP) etching of; antimonides; flip chip integration; conductive polymer based interconnections;

D O I：

10.1117/12.527869

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

引用

页码：36 / 47

页数：12