Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

被引：0

作者：

Lohokare, SK ^{[1
]}

Schuetz, CA ^{[1
]}

Lu, Z ^{[1
]}

Prather, DW ^{[1
]}

Sulima, OV ^{[1
]}

Cox, JA ^{[1
]}

Solov'ev, VA ^{[1
]}

Ivanov, SV ^{[1
]}

Li, JV ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

来源：

SEMICONDUCTOR PHOTODETECTORS | 2004年 / 5353卷

关键词：

high-speed optical interconnections; inductively coupled plasma (ICP) etching of; antimonides; flip chip integration; conductive polymer based interconnections;

D O I：

10.1117/12.527869

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

引用

页码：36 / 47

页数：12

共 32 条

[11] High-Saturation-Power and High-Speed Ge-on-SOI p-i-n Photodetectors
Xue, Hai-Yun
Xue, Chun-Lai
Cheng, Bu-Wen
Yu, Yu-De
Wang, Qi-Ming
IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) : 701 - 703
[12] FLIP-CHIP PLANAR GAINAS/INP P-I-N PHOTODIODE-ARRAY FOR PARALLEL OPTICAL-TRANSMISSION
MAKIUCHI, M
NORIMATSU, M
SAKURAI, T
KONDO, K
YANO, M
IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (05) : 518 - 520
[13] All-Optical XOR using 1550-nm High-Speed S-SEEDs and Integrated Micro-Optics
Keeler, G. A.
Serkland, D. K.
Hsu, A. Y.
Mukherjee, S. D.
Geib, K. M.
Overberg, M. E.
Klem, J. F.
Kemme, S. A.
Cruz-Cabrera, A. A.
Hadley, G. R.
2008 INTERNATIONAL CONFERENCE ON PHOTONICS IN SWITCHING, 2008, : 78 - 79
[14] Circular-core single-mode polymer waveguide for high-density and high-speed optical interconnects application at 1550 nm
Xu, Xiao
Ma, Lin
Jiang, Shoulin
He, Zuyuan
OPTICS EXPRESS, 2017, 25 (21): : 25689 - 25696
[15] High-Speed Normal-Incidence p-i-n InGaAs Photodetectors Grown on Silicon Substrates by MOCVD
Gao, Yan
Zhong, Zhenyu
Feng, Shaoqi
Geng, Yu
Liang, Hu
Poon, Andrew W.
Lau, Kei May
IEEE PHOTONICS TECHNOLOGY LETTERS, 2012, 24 (04)
[16] High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS
Lentine, AL
Goossen, KW
Walker, JA
Chirovsky, LMF
DAsaro, LA
Hui, SP
Tseng, BJ
Leibenguth, RE
Cunningham, JE
Jan, WY
Kuo, JM
Dahringer, DW
Kossives, DP
Bacon, D
Livescu, G
Morrison, RL
Novotny, RA
Buchholz, DB
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1996, 2 (01) : 77 - 84
[17] High-speed optoelectronic VLSI switching chip with >4000 optical I/O based on flip-chip bonding of MQW modulators and detectors to silicon CMOS
Lucent Technologies, Naperville, United States
IEEE J Sel Top Quantum Electron, 1 (77-84):
[18] High-Speed, High-Efficiency, Large-Area p-i-n Photodiode for Application to Optical Interconnects from 0.85 to 1.55 μm Wavelengths
Shi, Jin-Wei
Cheng, Ying-Hung
Wun, Jhih-Min
Chi, Kai-Lun
Hsin, Yue-Ming
Benjamin, Seldon D.
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2013, 31 (24) : 3956 - 3961
[19] HIGH-SPEED SIGNAL SWITCHING WITH A MONOLITHIC INTEGRATED P-I-N AMP SWITCH ON INDIUM-PHOSPHIDE
SEABURY, CW
BYLSMA, RB
VELLACOLEIRO, GP
KIM, SJ
DAVISSON, PS
YEE, CML
ENG, J
DEBLIS, D
JEONG, J
JHEE, YK
IEEE PHOTONICS TECHNOLOGY LETTERS, 1991, 3 (02) : 164 - 166
[20] High-Speed SiGe p-i-n W-Structure Photodetectors at Telecommunication Wavelengths. Grown Directly on Si
Ali, Dyan
Thompson, Phillip
Goldhar, Julius
DiPasquale, Joseph, III
Richardson, Christopher J. K.
2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9, 2008, : 1055 - +

← 1 2 3 4 →