Polymer flip-chip integrated AlGaAsSb/AlGaSb p-i-n photodetectors for 1550-nm high-speed optical interconnects

被引：0

作者：

Lohokare, SK ^{[1
]}

Schuetz, CA ^{[1
]}

Lu, Z ^{[1
]}

Prather, DW ^{[1
]}

Sulima, OV ^{[1
]}

Cox, JA ^{[1
]}

Solov'ev, VA ^{[1
]}

Ivanov, SV ^{[1
]}

Li, JV ^{[1
]}

机构：

[1] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA

来源：

SEMICONDUCTOR PHOTODETECTORS | 2004年 / 5353卷

关键词：

high-speed optical interconnections; inductively coupled plasma (ICP) etching of; antimonides; flip chip integration; conductive polymer based interconnections;

D O I：

10.1117/12.527869

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

AlGaAsSb/AlGaSb heterostructures offer the ability to realize high-performance devices for 1550 nm high-speed optical interconnect applications. In this context, we present the design, fabrication, integration and characterization of 10 GHz p-i-n photodetectors in this material system. This effort has involved an investigation into inductively coupled plasma (ICP) etching of these materials and the development of a novel process for their conductive polymer based flip chip die attach.

引用

页码：36 / 47

页数：12

共 32 条

[1] Thermally induced nonlinearities in high-speed p-i-n photodetectors
Stievater, TH
Williams, KJ
IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (01) : 239 - 241
[2] Nonlinear saturation behaviors of high-speed p-i-n photodetectors
Huang, YL
Sun, CK
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2000, 18 (02) : 203 - 212
[3] High-speed germanium p-i-n avalanche photodetectors on silicon
Benedikovic, Daniel
Virot, Leopold
Aubin, Guy
Hartmann, Jean-Michel
Amar, Farah
Szelag, Bertrand
Le Roux, Xavier
Alonso-Ramos, Carlos
Crozat, Paul
Cassan, Eric
Boeuf, Frederic
Fedeli, Jean-Marc
Kopp, Christophe
Vivien, Laurent
Marris-Morini, Delphine
INTEGRATED OPTICS: DESIGN, DEVICES, SYSTEMS AND APPLICATIONS VI, 2021, 11775
[4] High-speed and high-responsivity germanium p-i-n photodetectors
Xiao, Zhixiong
Feng, JunBo
Hu, Zhipeng
Shao, Sizhu
Guo, Jin
2020 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) AND INTERNATIONAL CONFERENCE ON INFORMATION PHOTONICS AND OPTICAL COMMUNICATIONS (IPOC), 2020,
[5] HIGH-SPEED CHARACTERIZATION OF P-I-N PHOTODETECTORS BY NONLINEAR PHOTOCURRENT SPECTROSCOPY
BENDER, G
SCHNEIDER, H
APPLIED PHYSICS LETTERS, 1994, 65 (05) : 613 - 615
[6] DIFFUSIVE ELECTRICAL-CONDUCTION IN HIGH-SPEED P-I-N PHOTODETECTORS
SCHNEIDER, H
LARKINS, EC
RALSTON, JD
FLEISSNER, J
BENDER, G
KOIDL, P
APPLIED PHYSICS LETTERS, 1992, 60 (21) : 2648 - 2650
[7] High-Speed, High-Efficiency, and Large-Area p-i-n Photodiode for Operations from 850 to 1550 nm Optical Wavelengths
Shi, Jin-Wei
Cheng, Ying-Hung
Wun, Jhih-Min
Chi, Kai-Lun
Hsin, Yue-Ming
Benjamin, Seldon D.
2013 IEEE PHOTONICS CONFERENCE (IPC), 2013, : 356 - 357
[8] INP/INGAAS/INP P-I-N PHOTODETECTORS FOR HIGH-SPEED LIGHTWAVE DETECTORS
SLOAN, S
HEWLETT-PACKARD JOURNAL, 1993, 44 (01): : 85 - 85
[9] Dark current analysis in high-speed germanium p-i-n waveguide photodetectors
Chen, H.
Verheyen, P.
De Heyn, P.
Lepage, G.
De Coster, J.
Balakrishnan, S.
Absil, P.
Roelkens, G.
Van Campenhout, J.
JOURNAL OF APPLIED PHYSICS, 2016, 119 (21)
[10] HIGH-PERFORMANCE, HIGH-RELIABILITY INP/GAINAS P-I-N PHOTODIODES AND FLIP-CHIP INTEGRATED RECEIVERS FOR LIGHTWAVE COMMUNICATIONS
WADA, O
MAKIUCHI, M
HAMAGUCHI, H
KUMAI, T
MIKAWA, T
JOURNAL OF LIGHTWAVE TECHNOLOGY, 1991, 9 (09) : 1200 - 1207

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