The effects of thermal annealing on properties of MgxZn1-xO films by sputtering

被引：24

作者：

Li, Hui ^{[1
]}

Zhang, Yongzhe ^{[1
]}

Pan, Xiaojun ^{[1
]}

Wang, Tao ^{[1
]}

Xie, Erqing ^{[1
]}

机构：

[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2009年 / 472卷 / 1-2期

关键词：

Doping; Thermal annealing; Band gap; Photoluminescence; EPITAXIAL-GROWTH; BAND-GAP; ZNO; PHOTOLUMINESCENCE; TEMPERATURE; EMISSION;

D O I：

10.1016/j.jallcom.2008.04.018

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We reported the effects of thermal annealing on the Mg-doped ZnO (MgxZn1-xO) films, which were prepared in the Ar-O-2 mixture ambience by magnetron sputtering. The X-ray diffraction (XRD) patterns showed that the crystal quality of films was enhanced by the post-annealing. and the lattice constants changed to some extent. Meanwhile, the UV-vis absorption spectra indicated that the band gap of the films increased as the increasing annealing temperature, which was resulted by the increasing Mg content by energy dispersive X-ray spectroscopy (EDS). Moreover, it could be seen that the photoluminescence (PL) spectrum was different from that of as-grown MgxZn1-xO films: the intensity of UV emission was enhanced but there was no shift with increasing Mg contents in MgxZn1-xO films. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：208 / 210

页数：3

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