The effects of thermal annealing on properties of MgxZn1-xO films by sputtering

被引:24
|
作者
Li, Hui [1 ]
Zhang, Yongzhe [1 ]
Pan, Xiaojun [1 ]
Wang, Tao [1 ]
Xie, Erqing [1 ]
机构
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
关键词
Doping; Thermal annealing; Band gap; Photoluminescence; EPITAXIAL-GROWTH; BAND-GAP; ZNO; PHOTOLUMINESCENCE; TEMPERATURE; EMISSION;
D O I
10.1016/j.jallcom.2008.04.018
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We reported the effects of thermal annealing on the Mg-doped ZnO (MgxZn1-xO) films, which were prepared in the Ar-O-2 mixture ambience by magnetron sputtering. The X-ray diffraction (XRD) patterns showed that the crystal quality of films was enhanced by the post-annealing. and the lattice constants changed to some extent. Meanwhile, the UV-vis absorption spectra indicated that the band gap of the films increased as the increasing annealing temperature, which was resulted by the increasing Mg content by energy dispersive X-ray spectroscopy (EDS). Moreover, it could be seen that the photoluminescence (PL) spectrum was different from that of as-grown MgxZn1-xO films: the intensity of UV emission was enhanced but there was no shift with increasing Mg contents in MgxZn1-xO films. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:208 / 210
页数:3
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