Progressive evolution of silicon surface microstructures via femtosecond laser irradiation in ambient air

被引:25
作者
Ma, Yuncan [1 ]
Si, Jinhai [2 ]
Sun, Xuehui [2 ]
Chen, Tao [2 ]
Hou, Xun [2 ]
机构
[1] CAEP, IFP, Natl Key Lab Shock Wave & Detonat Phys, Mianyang 621900, Sichuan, Peoples R China
[2] Xi An Jiao Tong Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Sch Elect & Informat Engn, Key Lab Phys Elect & Devices,Minist Educ, Xian 710049, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Evolution; Microstructures; Femtosecond laser; Silicon; Trapping effect; REGULAR ARRAYS; ABLATION;
D O I
10.1016/j.apsusc.2014.06.105
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Using 800-nm femtosecond laser irradiation, progressive evolution of the silicon surface microstructures has been demonstrated. Via the variation of laser irradiation parameters, four kinds of microstructures, such as: well-defined and clean nano-ripples, obscured nano-ripples with nano-protrusions and nano-holes, micro-spikes with nano-holes, and separated micro-spikes, have been produced. The morphology and chemical compositions of these microstructures have been characterized by a scanning electronic microscopy equipped with an energy dispersive x-ray spectroscopy. The formation and evolution mechanism of these microstructures have been systematically discussed. Meanwhile, the incorporation mechanism of foreign oxygen species into silicon materials has also been discussed on the basis of the femtosecond laser induced trapping effect of the dangling bonds. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:905 / 910
页数:6
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