Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods

被引：0

作者：

Shin, Jin-Wook ^{[1
]}

Choi, Chel-Jong ^{[2
]}

Jang, Moongyu ^{[3
]}

Cho, Won-Ju ^{[1
]}

机构：

[1] Kwangwoon Univ, Dept Elect Mat Engn, Seoul 139701, South Korea

[2] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Jeonju 561756, South Korea

[3] Elect & Telecommun Res Inst, U Terminal Res Team, Taejon 305700, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 04期

关键词：

PERFORMANCE; OXIDE; RESISTANCE; TFTS;

D O I：

10.1143/JJAP.48.04C151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky barrier thin-film transistors (SB-TFT) based on polycrystalline silicon (poly-Si) films crystallized by solid phase crystallization (SPC) and excimer laser annealing (ELA) methods were fabricated for system-on-glass (SOG) application. The structure of poly-Si films by ELA and SPC methods was analyzed. The formations of platinum silicide and erbium silicide were developed for p- and n-channel metallic junctions, respectively. The fabricated SB-TFTs have a large on/off current ratio with a low leakage current. The effects of forming gas annealing (FGA) in 2% H(2)/N(2) gas ambient were evaluated. As a result of FGA, significant improvements of electrical characteristics were obtained due to reduction of trap states. (C) 2009 The Japan Society of Applied Physics

引用

页数：4

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