Electronic properties of bilayer and trilayer graphyne in the presence of electric field

The influence of electric field on the electronic properties of bilayer and trilayer graphyne has been studied using the density functional theory. We have investigated alpha graphyne due to its analogous to graphene. The bilayer and trilayer graphyne with different stacking style configurations have been considered. Our results indicate that the electronic properties of alpha graphyne are insensitive to the number of graphyne layer and configuration. The bilayer and trilayer graphyne are semimetal similar to the monolayer graphyne. It is found that applying a uniform electric field perpendicular to the graphyne sheet changes the electronic properties of AB-stacked bilayer and ABC-stacked trilayer graphyne so that they become semiconductor. The band gaps of the bilayer and trilayer graphyne with these configurations are enhanced by increasing strength of the electric field. Therefore, possibility of controlling the electronic properties of graphyne by applying electric field makes graphyne as a good candidate for next generation nanoelectronic devices.