A two-axis magnetometer using a single magnetic tunnel junction

被引：13

作者：

Kammerer, JB ^{[1
]}

Hébrard, L

Heln, M

Braun, F

Alnot, P

Schuhl, A

机构：

[1] Univ Louis Pasteur Strasbourg 1, Lab Elect & Phys Syst Instrumentaux, Strasbourg, France

[2] Univ Henri Poincare, Lab Phys Mat, Vandoeuvre Les Nancy, France

[3] Univ Henri Poincare, Lab Phys Milieux Ionises & Appl, Vandoeuvre Les Nancy, France

来源：

IEEE SENSORS JOURNAL | 2004年 / 4卷 / 03期

关键词：

magnetic sensors; magnetic tunnel junction (MTJ); Stoner-Wohlfarth model;

D O I：

10.1109/JSEN.2004.824232

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on a qualitative study of the Stoner-Wohlfarth model, we point out that driving a magnetic tunnel junction (MTJ) with an alternative two-dimensional magnetic field allows to measure simultaneously two components of an external magnetic field. Only one single MTJ without a pinning layer is needed to measure both components of a magnetic field parallel to the junction plane. The response of the magnetometer does not depend on the resistance of the junction or the amplitude of its variations. A prototype has been manufactured and encouraging experimental results are presented. Sensitivities higher than 500 V/T and a noise level of 2 muT/rootHz are reported.

引用

页码：313 / 321

页数：9

共 16 条

[1] GMR and SDT sensor applications [J].

Daughton, JM .

IEEE TRANSACTIONS ON MAGNETICS, 2000, 36 (05) :2773-2778

[2] Spin electronics - a review [J].

Gregg, JF ;

Petej, I ;

Jouguelet, E ;

Dennis, C .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2002, 35 (18) :R121-R155

[3] Field sensing using the magnetoresistance of IrMn exchange-biased tunnel junctions [J].

Lacour, D ;

Jaffrès, H ;

Van Dau, FN ;

Petroff, F ;

Vaurès, A ;

Humbert, J .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (07) :4655-4658

[4] Magnetic tunnel junction field sensors with hard-axis bias field [J].

Liu, XY ;

Ren, C ;

Xiao, G .

JOURNAL OF APPLIED PHYSICS, 2002, 92 (08) :4722-4725

[5] Enhanced tunnel magnetoresistance at high bias voltage in double-barrier planar junctions [J].

Montaigne, F ;

Nassar, J ;

Vaures, A ;

Van Dau, FN ;

Petroff, F ;

Schuhl, A ;

Fert, A .

APPLIED PHYSICS LETTERS, 1998, 73 (19) :2829-2831

[6] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[7] Magnetically engineered spintronic sensors and memory [J].

Parkin, S ;

Jiang, X ;

Kaiser, C ;

Panchula, A ;

Roche, K ;

Samant, M .

PROCEEDINGS OF THE IEEE, 2003, 91 (05) :661-680

[8] Integrated magnetic field sensor based on magnetoresistive spin valve structures [J].

Prieto, JL ;

Rouse, N ;

Todd, NK ;

Morecroft, D ;

Wolfman, J ;

Evetts, JE ;

Blamire, MG .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 94 (1-2) :64-68

[9] Low frequency noise in magnetic tunnel junctions [J].

Reed, DS ;

Nordman, C ;

Daughton, JM .

IEEE TRANSACTIONS ON MAGNETICS, 2001, 37 (04) :2028-2030

[10] Micro-fluxgate sensor with closed core [J].

Ripka, P ;

Kawahito, S ;

Choi, SO ;

Tipek, A ;

Ishida, M .

SENSORS AND ACTUATORS A-PHYSICAL, 2001, 91 (1-2) :65-69

← 1 2 →