Vanadium doping effects on ferroelectric and electrical properties of bi-excess Bi3.25+xLa0.75Ti2.97V0.03O12 ceramics

被引：6

作者：

Kim, Jin Soo ^{[1
]}

Ahn, Chang Won

Lee, Sun Young

Kim, Ill Won

Lee, Jeong Sik

Jin, Byung Moon

机构：

[1] Univ Ulsan, Inst Basic Sci, Ulsan 680749, South Korea

[2] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

[3] Kyungsung Univ, Dept Phys, Pusan 608736, South Korea

[4] Dongeui Univ, Dept Phys, Pusan 614714, South Korea

来源：

FERROELECTRICS | 2006年 / 332卷

关键词：

BLT; ferroelectric; ac conductivity; dielectric property;

D O I：

10.1080/00150190500324956

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bimuth(Bi) excessed and vanadium(V)-doped Bi3.25+xLa0.75Ti2.97V0.03O12 (BLTV) ceramics were prepared by a solid state reaction. Crystallized single-phases with Bi-layered perovskite structure were confirmed by X-ray diffraction. The low frequency dielectric dispersion was decreased, and the conductivity was decreased for the Bi-excessed BLTV ceramics of x = 0.05-0.10. The V doping improved the ferroelectric properties and decreased the conductivity. The effects of V-doping on ferroelectric and electrical properties on Bi-excessed BLTV ceramics were investigated.

引用

页码：65 / 69

页数：5

共 5 条

[1] Kim J. S., 2002, JPN J APPL PHYS, V41, P5497
[2] Large remanent polarization of vanadium-doped Bi4Ti3O12
Noguchi, Y
Miyayama, M
[J]. APPLIED PHYSICS LETTERS, 2001, 78 (13) : 1903 - 1905
[3] Lanthanum-substituted bismuth titanate for use in non-volatile memories
Park, BH
Kang, BS
Bu, SD
Noh, TW
Lee, J
Jo, W
[J]. NATURE, 1999, 401 (6754) : 682 - 684
[4] Preparation of Bi3.25+xLa0.75Ti3O12+y films on ruthenium electrodes
Sato, T
Kuroiwa, T
Sugahara, K
Ishiwara, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4A): : 2105 - 2109
[5] Structural distortion and ferroelectric properties of SrBi2(Ta1-xNbx)2O9
Shimakawa, Y
Kubo, Y
Tauchi, Y
Kamiyama, T
Asano, H
Izumi, F
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (17) : 2749 - 2751

← 1 →