Structural Instability in Amorphous In-Ga-Zn-O Films Investigated by Mechanical Stress Analysis

被引：4

作者：

Cho, Ju-Young ^{[1
]}

Yang, Tae-Youl ^{[1
]}

Park, Yong-Jin ^{[1
]}

Lee, Yoo-Yong ^{[1
]}

Joo, Young-Chang ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[2] Seoul Natl Univ, RIAM, Seoul 151742, South Korea

来源：

ECS SOLID STATE LETTERS | 2014年 / 3卷 / 06期

关键词：

GLASS-TRANSITION TEMPERATURE; THIN; RELAXATION; OXIDE; DEPENDENCE; SIMULATION;

D O I：

10.1149/2.004406ssl

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Amorphous In-Ga-Zn-O (a-IGZO) experiences an inherent structural instability which restrict its applications in electronic devices. By utilizing an in-situ mechanical stress analysis, we characterized the phase and structural changes. The glass transition temperature, T-g (423-562 degrees C) and fragility (18-28) in a-IGZO films were observed to ascertain quantitative criteria for the structural stability. The structural stability near T-g was significantly reduced as the thickness decreased due to the effect of the unstable surface layer. The structural relaxation of glass below T-g was identified as the viscous flow and densification. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：P73 / P76

页数：4

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