La1-xBaxMnO3 epitaxial thin films by pulsed-laser deposition:: A consequence of strain stabilization

被引：24

作者：

Pradhan, AK ^{[1
]}

Sahu, DR

Roul, BK

Feng, Y

机构：

[1] Univ Virginia, Jesse W Beams Lab Phys, Charlottesville, VA 22901 USA

[2] Inst Mat Sci Agh, Bhubaneswar 751005, Orissa, India

[3] NW Inst Nonferrous Met Res, Xian 710016, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 19期

关键词：

D O I：

10.1063/1.1518157

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report transport, magnetization, and transmission-electron-microscopic studies of La1-xBaxMnO3/SrTiO3 thin films grown by pulsed-laser deposition. The metal-insulator transition is remarkably sharp, and the high value of the temperature coefficient of resistivity is significantly relevant for the required value for the infrared imaging applications. We have demonstrated that the strain-induced property can be tuned and stabilized in La1-xBaxMnO3 films simply by changing the doping level (La/Ba ratio) and addition of metal ions (Ag) for applications at desirable temperature regime close to room temperature. (C) 2002 American Institute of Physics.

引用

页码：3597 / 3599

页数：3

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