Modeling the zero and forward bias operation of PIN diodes for high-frequency applications

被引：7

作者：

Drozdovski, NV ^{[1
]}

Drozdovskaia, LM ^{[1
]}

Caverly, RH ^{[1
]}

Quinn, MJ ^{[1
]}

机构：

[1] Villanova Univ, Villanova, PA 19085 USA

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 11期

基金：

美国国家科学基金会;

关键词：

PIN diode; computer modeling; control applications;

D O I：

10.1016/S0038-1101(02)00246-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon-based PIN diodes have been studied in a high-frequency switching application under moderate to high input voltage levels. A model suitable for full circuit simulators such as SPICE is proposed and tested. The model accurately describes the impedance behavior over changes in frequency, DC bias current and applied voltage level. A localized maximum in series resistance is accurately modeled and found to be a function of the diode's transit time effect. The model also describes the nonlinear high current stored charge-DC bias current effect. The full circuit PIN diode model is verified with experimental observations. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：2001 / 2008

页数：8

共 15 条

[1]

[Anonymous], 1982, MICROWAVE SEMICONDUC

[2]

CAVERLY R, 1994, P 1 ICEIT 94 BEIJ CH, P253

[3] NONLINEAR STORED CHARGE VS DC BIAS-CURRENT RELATIONSHIP UNDER HIGH-LEVEL INJECTION IN PIN DIODES [J].