Sub-10-nm nanolithography with a scanning helium beam

被引：115

作者：

Sidorkin, Vadim ^{[1
]}

van Veldhoven, Emile ^{[2
]}

van der Drift, Emile ^{[1
]}

Alkemade, Paul ^{[1
]}

Salemink, Huub ^{[1
]}

Maas, Diederik ^{[2
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, NL-2628 CJ Delft, Netherlands

[2] TNO Sci & Ind, NL-2628 CK Delft, Netherlands

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2009年 / 27卷 / 04期

关键词：

ion beam lithography; nanolithography; organic compounds; proximity effect (lithography); resists; HYDROGEN SILSESQUIOXANE; POLYMER RESISTS; LITHOGRAPHY; EXPOSURE;

D O I：

10.1116/1.3182742

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scanning helium ion beam lithography is presented as a promising pattern definition technique for dense sub-10-nm structures. The powerful performance in terms of high resolution, high sensitivity, and a low proximity effect is demonstrated in a hydrogen silsesquioxane resist.

引用

页码：L18 / L20

页数：3

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