Wettability study of SiC in correlation with XPS analysis

被引：4

作者：

Stambouli, V

Chaussende, D

Anikin, M

Berthomé, G

Thoreau, V

Joud, JC

机构：

[1] ENSPG, Mat & Genie Phys Lab, UMR 5628, F-38402 St Martin Dheres, France

[2] ENSEEG, Thermodynam & Physicochim Met Lab, UMR 5616, F-38402 St Martin Dheres, France

[3] NOVASiC, Savoie Technolac, F-73375 Le Bourget Du Lac, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

wettability; contact angle; XPS; SiOH; SiO2;

D O I：

10.4028/www.scientific.net/MSF.457-460.423

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The wettability characteristics of both C and Si faces covered with their natural oxide of differently polished 6H-SiC wafers have been systematically determined using the contact angle measurement, before and after HF treatment. XPS was used to characterise the surface chemical state. In an original way and for the first time regarding SiC wafers, we proposed a fitting of the oxygen peak which allowed to calculate the area SiOH/SiO2 ratio. A strong correlation was found between the wettability increase induced by the HF treatment and the presence of polar hydrophilic SiOH groups on the surface.

引用

收藏

页码：423 / 426

页数：4

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