Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

被引：13

作者：

Giust, GK ^{[1
]}

Sigmon, TW

机构：

[1] LSI Log, Santa Clara, CA 95054 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 01期

关键词：

excimer laser; full melt threshold; gas immersion laser doping; hydrogenation; laser crystallization; poly-Si TFT; sputtered silicon; thin film transistor;

D O I：

10.1109/16.817587

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TET performance improves as the H content is lowered. Devices made from similar to 0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower processing temperature (300 OC). The best sputtered TFT's had mobilities of similar to 200 cm(2)/Vs, and on/off current ratios of more that 10(8).

引用

页码：207 / 213

页数：7

共 13 条

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