Laser-processed thin-film transistors fabricated from sputtered amorphous-silicon films

被引：13
作者：
Giust, GK [1 ]
Sigmon, TW
机构：
[1] LSI Log, Santa Clara, CA 95054 USA
[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 01期
关键词：
excimer laser; full melt threshold; gas immersion laser doping; hydrogenation; laser crystallization; poly-Si TFT; sputtered silicon; thin film transistor;
D O I：
10.1109/16.817587
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low-temperature polysilicon thin-film transistors (TFT's) have been fabricated from sputtered silicon films and characterized as a function of as-deposited hydrogen (H) content and laser crystallization fluence. A general trend is observed where TET performance improves as the H content is lowered. Devices made from similar to 0% H sputtered films perform similar to those made from low-pressure chemical-vapor deposition processes (LPCVD), but are fabricated at a much lower processing temperature (300 OC). The best sputtered TFT's had mobilities of similar to 200 cm(2)/Vs, and on/off current ratios of more that 10(8).
引用
收藏
页码：207 / 213
页数：7
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