Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

被引:0
|
作者
Drexler, C. [1 ]
Bel'kov, V. V. [2 ]
Ashkinadze, B. [3 ]
Olbrich, P. [1 ]
Zoth, C. [1 ]
Lechner, V. [1 ]
Terent'ev, Ya. V. [2 ]
Yakovlev, D. R. [2 ,4 ]
Karczeswki, G. [5 ]
Wojtowicz, T. [5 ]
Schuh, D. [1 ]
Wegscheider, W. [1 ]
Ganichev, S. D. [2 ]
机构
[1] Univ Regensburg, Terahertz Ctr, D-93040 Regensburg, Germany
[2] Russian Acad Sci, A F Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Tech Israel Inst Technol, Solid State Inst, IL-3200 Haifa, Israel
[4] TU Dortmund Univ, Expt Phys 2, D-4421 Dortmund, Germany
[5] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report on microwave (mw) radiation induced electric currents in semimagnetic CdMnTe and nonmagnetic InAs: Si quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of electrons heated by mw radiation.
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