Interface modeling between the printed thick-film silver paste and emitter for crystalline silicon solar cells

被引：3

作者：

Yang, Hong ^{[1
]}

Wang, He ^{[1
]}

Lei, Xiandao ^{[1
]}

Chen, Chuanke ^{[1
]}

Cao, Dingyue ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Inst Solar Energy, MOE Key Lab Nonequilibrim Synth & Modulat Condens, Xian 710049, Peoples R China

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2014年 / 27卷 / 04期

关键词：

solar cells; silver pastes; interface; model; CONTACT RESISTANCE; AG CONTACTS;

D O I：

10.1002/jnm.1925

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

According to the potential barriers generated by the silver, glass layer, and N+ emitter, an analytical model is developed to explain interface contact performance between the printed thick-film silver paste and emitter for crystalline silicon solar cells. According to the model, the front contact resistance between the sintered silver and N+ emitter is simulated at different doping concentrations, temperatures, and density of state. The quantitative expression of interface contact resistance between the printed thick-film silver paste and N+ emitter is derived for the first time. The results in this study unify different viewpoints about the current transport mechanisms at the sintered silver-silicon interface. If the glass frit chemistry and silver particle size are carefully tailored, the silver consumption per watt can be reduced, and the efficiency of crystalline silicon solar cells can be further improved. The results lay the foundation for studying the screen-printed crystalline silicon solar cell front contact metallization system. Copyright (c) 2013 John Wiley & Sons, Ltd.

引用

页码：649 / 655

页数：7

共 13 条

[11] TEMPERATURE-DEPENDENCE OF SPECIFIC CONTACT RESISTIVITY
SWIRHUN, SE
SWANSON, RM
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) : 155 - 157
[12] Specific contact resistance measurements of the screen-printed Ag thick film contacts in the silicon solar cells by three-point probe methodology and TLM method
Vinod, P. N.
[J]. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2011, 22 (09) : 1248 - 1257
[13] The materials characteristic and the efficiency degradation of solar cells from solar grade silicon from a metallurgical process route
Yang, Hong
Wang, He
[J]. JOURNAL OF MATERIALS SCIENCE, 2011, 46 (04) : 1044 - 1048

← 1 2 →