Current-induced switching of magnetic tunnel junctions: Effects of field-like spin-transfer torque, pinned-layer magnetization orientation, and temperature

被引：6

作者：

Tiwari, R. K. ^{[1
]}

Jhon, M. H. ^{[1
]}

Ng, N. ^{[1
]}

Srolovitz, D. J. ^{[2
,3
,4
,5
]}

Gan, C. K. ^{[1
]}

机构：

[1] Agcy Sci Technol & Res, Inst High Performance Comp, Singapore 138632, Singapore

[2] Univ Penn, Dept Mat Sci, Philadelphia, PA 19104 USA

[3] Univ Penn, Dept Engn, Philadelphia, PA 19104 USA

[4] Univ Penn, Dept Mech Engn, Philadelphia, PA 19104 USA

[5] Univ Penn, Dept Appl Mech, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 02期

关键词：

Magnetic field effects - Tunnel junctions - Magnetization - Switching;

D O I：

10.1063/1.4862182

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study current-induced switching in magnetic tunnel junctions in the presence of a field-like spin-transfer torque and titled pinned-layer magnetization in the high current limit at finite temperature. We consider both the Slonczewski and field-like torques with coefficients a(J) and b(J), respectively. At finite temperatures, sigma = b(J)/a(J) = +/-1 leads to a smaller mean switching time compared that with sigma = 0. The reduction of switching time in the presence of the field-like term is due to the alignment effect (for sigma > 0) and the initial torque effect. (C) 2014 AIP Publishing LLC.

引用

页数：5