1.8GHz class E power amplifier for wireless communications

被引：9

作者：

Sowlati, T

Greshishchev, Y

Andre, C

Salama, T

机构：

[1] Department of Electrical Engineering, University of Toronto, Toronto

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 20期

关键词：

power amplifiers; cordless telephone systems;

D O I：

10.1049/el:19961262

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors present a 1.8GHz class E power amplifier for wireless communications. A fully integrated class E power amplifier module was designed, fabricated and tested. The circuit was implemented in a self-aligned-gate, depletion mode 0.8 mu m GaAs MESFET process. The amplifier delivers 23dBm of power to the 50 Ohm load, with a power added efficiency of 57% at a supply voltage of 2.4V.

引用

页码：1846 / 1848

页数：3

共 6 条

[1]

Dietsche S., 1993, 23rd European Microwave Conference Proceedings, P252, DOI 10.1109/EUMA.1993.336858

[2]

Herrera A., 1993, 23rd European Microwave Conference Proceedings, P155, DOI 10.1109/EUMA.1993.336826

[3]

ROHRINGER N, 1993, IEEE T VEH TECHNOL, V42, P680

[4] LOW-VOLTAGE, HIGH-EFFICIENCY GAAS CLASS-E POWER-AMPLIFIERS FOR WIRELESS TRANSMITTERS [J].

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SALAMA, CAT ;

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SMITH, D .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1995, 30 (10) :1074-1080

[5] GAAS-FET DEVICE AND CIRCUIT SIMULATION IN SPICE [J].

STATZ, H ;

NEWMAN, P ;

SMITH, IW ;

PUCEL, RA ;

HAUS, HA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (02) :160-169

[6] CLASS-E POWER-AMPLIFIERS AND FREQUENCY-MULTIPLIERS WITH FINITE DC-FEED INDUCTANCE [J].

ZULINSKI, RE ;

STEADMAN, JW .

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS, 1987, 34 (09) :1074-1087

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