Epitaxial growth of graphene thin film by pulsed laser deposition

被引：7
作者：
Wang, Jin [1 ,2 ]
Xiong, Zhengwei [3 ]
Yu, Jian [2 ]
Yin, Hongbu [2 ]
Wang, Xuemin [2 ]
Peng, Liping [2 ]
Wang, Yuying [2 ]
Wang, Xinmin [2 ]
Jiang, Tao [2 ]
Cao, Linhong [3 ,4 ]
Wu, Weidong [2 ,3 ,4 ]
Wang, Chuanbin [1 ]
Zhang, Lianmeng [1 ]
机构：
[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[2] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China
[3] Southwest Univ Sci & Technol, Lab Extreme Condit Matter Properties, Mianyang 621010, Sichuan, Peoples R China
[4] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Mianyang 621010, Sichuan, Peoples R China
来源：
MICRO & NANO LETTERS | 2015年 / 10卷 / 11期
关键词：
pulsed laser deposition; vapour phase epitaxial growth; X-ray photoelectron spectra; graphene; thin films; Raman spectra; transmission electron microscopy; epitaxial growth; graphene thin film; X-ray photoelectron spectroscopy; XPS; carbon binding energy; Raman spectroscopy; high-resolution transmission electron microscopy; HRTEM; depositing temperature; single oriented crystal domains; temperature; 873; K; C; CARBON; GRAPHITE; EMISSION;
D O I：
10.1049/mnl.2015.0047
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp(2)-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.
引用
收藏
页码：649 / 652
页数：4
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