Epitaxial growth of graphene thin film by pulsed laser deposition

被引：7

作者：

Wang, Jin ^{[1
,2
]}

Xiong, Zhengwei ^{[3
]}

Yu, Jian ^{[2
]}

Yin, Hongbu ^{[2
]}

Wang, Xuemin ^{[2
]}

Peng, Liping ^{[2
]}

Wang, Yuying ^{[2
]}

Wang, Xinmin ^{[2
]}

Jiang, Tao ^{[2
]}

Cao, Linhong ^{[3
,4
]}

Wu, Weidong ^{[2
,3
,4
]}

Wang, Chuanbin ^{[1
]}

Zhang, Lianmeng ^{[1
]}

机构：

[1] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China

[2] China Acad Engn Phys, Res Ctr Laser Fus, Mianyang 621900, Sichuan, Peoples R China

[3] Southwest Univ Sci & Technol, Lab Extreme Condit Matter Properties, Mianyang 621010, Sichuan, Peoples R China

[4] Southwest Univ Sci & Technol, Sch Mat Sci & Engn, Mianyang 621010, Sichuan, Peoples R China

来源：

MICRO & NANO LETTERS | 2015年 / 10卷 / 11期

关键词：

pulsed laser deposition; vapour phase epitaxial growth; X-ray photoelectron spectra; graphene; thin films; Raman spectra; transmission electron microscopy; epitaxial growth; graphene thin film; X-ray photoelectron spectroscopy; XPS; carbon binding energy; Raman spectroscopy; high-resolution transmission electron microscopy; HRTEM; depositing temperature; single oriented crystal domains; temperature; 873; K; C; CARBON; GRAPHITE; EMISSION;

D O I：

10.1049/mnl.2015.0047

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial graphene films have been prepared by pulsed laser deposition. X-ray photoelectron spectroscopy analysis shows that the carbon binding energy is 284.7 eV, corresponding to sp(2)-C. Raman spectroscopy indicates that there exists 2D and D peaks and thus graphene structures have been formed. Meanwhile, according to high-resolution transmission electron microscopy analysis, suitable depositing temperature for graphene films is found to be 873 K and the single oriented crystal domains of graphene are observed only with the condition of 100 pulses laser.

引用

页码：649 / 652

页数：4

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