Enhancement-mode GaAs n-channel MOSFET

被引：51

作者：

Rajagopalan, Karthik ^{[1
]}

Abrokwah, Jonathan ^{[1
]}

Droopad, Ravi ^{[1
]}

Passlack, Matthias ^{[1
]}

机构：

[1] Freescale Semicond Inc, Tempe, AZ 85284 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 12期

关键词：

compound semiconductor; enhancement model; GaAs; high-mobility channel; MOSFETs;

D O I：

10.1109/LED.2006.886319

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOS-FETs feature an In0.3Ga0.7As channel layer, a channel mobility of up to 6207 cm(2)/V (.) s, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mu m, a source/drain spacing of 3 mu m, and a threshold voltage of 0.05 V show a saturation current, transconductance, ON-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omega (.) mm, and 162 mV/dec, respectively.

引用

页码：959 / 962

页数：4

共 17 条

[1] Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators
Afanas'ev, VV
Stesmans, A
Passlack, M
Medendorp, N
[J]. APPLIED PHYSICS LETTERS, 2004, 85 (04) : 597 - 599
[2] GALLIUM ARSENIDE MOS TRANSISTORS
BECKE, H
HALL, R
WHITE, J
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (10) : 813 - &
[3] Fountain G. G., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P887, DOI 10.1109/IEDM.1989.74196
[4] Scanning tunneling microscopy and spectroscopy of gallium oxide deposition and oxidation on GaAs(001)-c(2x8)/(2x4)
Hale, MJ
Yi, SI
Sexton, JZ
Kummel, AC
Passlack, M
[J]. JOURNAL OF CHEMICAL PHYSICS, 2003, 119 (13) : 6719 - 6728
[5] GAAS INVERSION-TYPE MIS TRANSISTORS
ITO, T
SAKAI, Y
[J]. SOLID-STATE ELECTRONICS, 1974, 17 (07) : 751 - 759
[6] GAAS MICROWAVE MOSFETS
MIMURA, T
ODANI, K
YOKOYAMA, N
NAKAYAMA, Y
FUKUTA, M
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 573 - 579
[7] Development methodology for high-κ gate dielectrics on III-V semiconductors:: GdxGa0.4-xO0.6/Ga2O3 dielectric stacks on GaAs
Passlack, M
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (04): : 1773 - 1781
[8] High mobility NMOSFET structure with high-k-dielectric
Passlack, M
Droopad, R
Rajagopalan, K
Abrokwah, J
Gregory, R
Nguyen, D
[J]. IEEE ELECTRON DEVICE LETTERS, 2005, 26 (10) : 713 - 715
[9] Role of Ga2O3 template thickness and gadolinium mole fraction in GdxGa0.4-xO0.6/Ga2O3 gate dielectric stacks on GaAs
Passlack, M
Medendorp, N
Gregory, R
Braddock, D
[J]. APPLIED PHYSICS LETTERS, 2003, 83 (25) : 5262 - 5264
[10] Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
Passlack, M
Abrokwah, JK
Droopad, R
Yu, ZY
Overgaard, C
Yi, SI
Hale, M
Sexton, J
Kummel, AC
[J]. IEEE ELECTRON DEVICE LETTERS, 2002, 23 (09) : 508 - 510

← 1 2 →