Origins of Moire Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales

被引:3
作者
Wang, Jin [1 ,2 ]
Namburu, Raju [3 ]
Dubey, Madan [4 ]
Dongare, Avinash M. [1 ,2 ]
机构
[1] Univ Connecticut, Dept Mat Sci & Engn, Storrs, CT 06269 USA
[2] Univ Connecticut, Inst Mat Sci, Storrs, CT 06269 USA
[3] US Army Res Lab, Computat & Informat Sci Directorate, Aberdeen Proving Ground, MD 21005 USA
[4] US Army Res Lab, Sensors & Electron Devices Directorate, Adelphi, MD 20783 USA
来源
SCIENTIFIC REPORTS | 2018年 / 8卷
关键词
SINGLE-LAYER MOS2; ELECTRONIC-PROPERTIES; STRAIN; ENERGY; MONOLAYER; GRAPHENE;
D O I
10.1038/s41598-018-27582-z
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS2) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS2 terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moire patterns. The Moire islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of 2% and at compressive strains of similar to 2.5%. The vertical displacements of the atoms and the dimensions of the Moire islands predicted using the MD simulation are in excellent agreement with that observed experimentally.
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页数:9
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共 49 条
  • [1] Strain-engineered growth of two-dimensional materials
    Ahn, Geun Ho
    Amani, Matin
    Rasool, Haider
    Lien, Der-Hsien
    Mastandrea, James P.
    Ager, Joel W., III
    Dubey, Madan
    Chrzan, Daryl C.
    Minor, Andrew M.
    Javey, Ali
    [J]. NATURE COMMUNICATIONS, 2017, 8
  • [2] Alpha T. N. D., 2008, NEW J PHYS, V10
  • [3] Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides
    Bhattacharyya, Swastibrata
    Singh, Abhishek K.
    [J]. PHYSICAL REVIEW B, 2012, 86 (07)
  • [4] Single-layer MoS2 on Au(111): Band gap renormalization and substrate interaction
    Bruix, Albert
    Miwa, Jill A.
    Hauptmann, Nadine
    Wegner, Daniel
    Ulstrup, Soren
    Gronborg, Signe S.
    Sanders, Charlotte E.
    Dendzik, Maciej
    Cabo, Antonija Grubisic
    Bianchi, Marco
    Lauritsen, Jeppe V.
    Khajetoorians, Alexander A.
    Hammer, Bjork
    Hofmann, Philip
    [J]. PHYSICAL REVIEW B, 2016, 93 (16)
  • [5] Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
    Butler, Sheneve Z.
    Hollen, Shawna M.
    Cao, Linyou
    Cui, Yi
    Gupta, Jay A.
    Gutierrez, Humberto R.
    Heinz, Tony F.
    Hong, Seung Sae
    Huang, Jiaxing
    Ismach, Ariel F.
    Johnston-Halperin, Ezekiel
    Kuno, Masaru
    Plashnitsa, Vladimir V.
    Robinson, Richard D.
    Ruoff, Rodney S.
    Salahuddin, Sayeef
    Shan, Jie
    Shi, Li
    Spencer, Michael G.
    Terrones, Mauricio
    Windl, Wolfgang
    Goldberger, Joshua E.
    [J]. ACS NANO, 2013, 7 (04) : 2898 - 2926
  • [6] Local Strain Engineering in Atomically Thin MoS2
    Castellanos-Gomez, Andres
    Roldan, Rafael
    Cappelluti, Emmanuele
    Buscema, Michele
    Guinea, Francisco
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. NANO LETTERS, 2013, 13 (11) : 5361 - 5366
  • [7] Bandgap Engineering of Strained Monolayer and Bilayer MoS2
    Conley, Hiram J.
    Wang, Bin
    Ziegler, Jed I.
    Haglund, Richard F., Jr.
    Pantelides, Sokrates T.
    Bolotin, Kirill I.
    [J]. NANO LETTERS, 2013, 13 (08) : 3626 - 3630
  • [8] Two Dimensional Electrostrictive Field Effect Transistor (2D-EFET): A sub-60mV/decade Steep Slope Device with High ON current
    Das, Saptarshi
    [J]. SCIENTIFIC REPORTS, 2016, 6
  • [9] Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain
    Dong, Liang
    Wang, Jin
    Namburu, Raju
    O'Regan, Terrance P.
    Dubey, Madan
    Dongare, Avinash M.
    [J]. JOURNAL OF APPLIED PHYSICS, 2015, 117 (24)
  • [10] Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets
    Dong, Liang
    Dongare, Avinash M.
    Namburu, Raju R.
    O'Regan, Terrance P.
    Dubey, Madan
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (05)