Grain boundaries in Cu(In, Ga)(Se, S)2 thin-film solar cells

被引：138
作者：
Rau, Uwe [1 ]
Taretto, Kurt [2 ]
Siebentritt, Susanne [3 ]
机构：
[1] Forschungszentrum Julich, Photovoltaik IEF5, D-52425 Julich, Germany
[2] Univ Nacl Comahue, Dto Elct, RA-1400 Buenos Aires, Neuquen, Argentina
[3] Univ Luxemburg, L-1511 Luxembourg, Luxembourg
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2009年 / 96卷 / 01期
关键词：
HIGH-EFFICIENCY; POLYCRYSTALLINE CU(IN; GA)SE-2; ELECTRONIC-PROPERTIES; CUINS2; FILMS; LOW-COST; TEXTURE; PERFORMANCE; MODULES; SODIUM; GROWTH;
D O I：
10.1007/s00339-008-4978-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The paper reviews the current status of the research on grain boundaries in polycrystalline Cu(In, Ga)(S, Se)(2) alloys used as absorber materials for thin-film solar cells. We discuss the different concepts that are available to explain the relatively low electronic activity of grain boundaries in these materials. Numerical simulations that have been undergone so far to model the polycrystalline solar cells are briefly summarized. In addition, we give an overview on the experiments that have been conducted so far to elucidate the structural, defect-chemical, and electronic properties of grain boundaries in Cu(In, Ga)(S, Se)(2) thin-films.
引用
收藏
页码：221 / 234
页数：14
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