Investigation of the interface properties of MOVPE grown AlGaN/GaN high electron mobility transistor (HEMT) structures on sapphire

被引：36

作者：

Aggerstam, T.

Lourdudoss, S.

Radamson, H. H.

Sjodin, M.

Lorenzini, P.

Look, D. C.

机构：

[1] KTH, Royal Inst Technol, S-16440 Kista, Sweden

[2] CNRS, CHREA, F-06560 Valbonne, France

[3] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[4] USAF, Res Lab, MLPS, Wright Patterson AFB, OH 45433 USA

来源：

THIN SOLID FILMS | 2006年 / 515卷 / 02期

关键词：

MOVPE; HEMT; scattering; interface roughness; X-ray reflectivity; dislocations;

D O I：

10.1016/j.tsf.2006.04.052

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a virtual GaN substrate on sapphire based on a two-step growth method. By optimizing the growth scheme for the virtual substrate we have improved crystal quality and reduced interface roughness. Our Al0.22Ga0.78N/GaN HEMT structure grown on the optimized semi-insulating GaN virtual substrate, exhibits Hall mobilities as high as 1720 and 7350 cm(2)/Vs and sheet carrier concentrations of 8.4 x 1012 and 10.0 x 1012 cm(-2) at 300 K and 20 K, respectively The presence of good AlGaN/GaN interface quality and surface morphology is also substantiated by X-Ray reflectivity and Atomic Force Microscopy measurements. A simplified transport model is used to fit the experimental Hall mobility. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：705 / 707

页数：3

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